PD - 94163 HEXFET POWER MOSFET IRF5N4905 SURFACE MOUNT (SMD-1) 55V, P-CHANNEL Product Summary Part Number BV RDS(on) ID DSS IRF5N4905 -55V 0.024 -55A* Fifth Generation HEXFET power MOSFETs from SMD-1 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features: per silicon unit area. This benefit, combined with the Low RDS(on) fast switching speed and ruggedized device design Avalanche Energy Ratings that HEXFET power MOSFETs are well known for, Dynamic dv/dt Rating provides the designer with an extremely efficient device for use in a wide variety of applications. Simple Drive Requirements Ease of Paralleling These devices are well-suited for applications such Hermetically Sealed as switching power supplies, motor controls, invert- Surface Mount ers, choppers, audio amplifiers and high-energy pulse Light Weight circuits. Absolute Maximum Ratings Parameter Units I V = -10V, T = 25C Continuous Drain Current -55* D GS C A I V = -10V, T = 100C Continuous Drain Current -36 D GS C I Pulsed Drain Current -220 DM P T = 25C Max. Power Dissipation 125 W D C Linear Derating Factor 1.0 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 330 mJ AS I Avalanche Current -36 A AR E Repetitive Avalanche Energy 12.5 mJ AR dv/dt Peak Diode Recovery dv/dt 4.0 V/ns T Operating Junction -55 to 150 J o T Storage Temperature Range C STG Package Mounting Surface Temperature 300 (for 5 s) Weight 2.6 (Typical) g * Current is limited by package For footnotes refer to the last page www.irf.com 1 04/09/01IRF5N4905 Electrical Characteristics Tj = 25C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BV Drain-to-Source Breakdown Voltage -55 V V = 0V, I = -250 A DSS GS D BV / T Temperature Coefficient of Breakdown -0.051 V/C Reference to 25C, I = -1.0mA DSS J D Voltage R Static Drain-to-Source On-State 0.024 V = 10V, I = -36A DS(on) GS D Resistance V Gate Threshold Voltage -2.0 -4.0 V V = V , I = -250 A GS(th) DS GS D g Forward Transconductance 19 S ( )V -25V, I = -36A fs DS DS I Zero Gate Voltage Drain Current -25 V = -55V ,V =0V DSS DS GS A -250 V = -44V, DS V = 0V, T =125C GS J I Gate-to-Source Leakage Forward -100 V = -20V GSS GS nA I Gate-to-Source Leakage Reverse 100 V = 20V GSS GS Q Total Gate Charge 195 V =-10V, I = -36A g GS D Q Gate-to-Source Charge 45 nC V = -44V gs DS Q Gate-to-Drain (Miller) Charge 75 gd t Turn-On Delay Time 35 V = -28V, I = -36A, d(on) DD D t Rise Time 165 V =-10V, R = 2.5 r GS G ns t Turn-Off Delay Time 95 d(off) t Fall Time 130 f L + L Total Inductance 5.9 S D Measured from the center of nH drain pad to center of source pad C Input Capacitance 3633 V = 0V, V = -25V iss GS DS C Output Capacitance 1312 pF f = 1.0MHz oss C Reverse Transfer Capacitance 505 rss Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions I Continuous Source Current (Body Diode) -55* S A I Pulse Source Current (Body Diode) -220 SM V Diode Forward Voltage -1.6 V T = 25C, I = -36A, V = 0V SD j S GS t Reverse Recovery Time 120 ns T = 25C, I = -36A, di/dt 100A/ s rr j F Q Reverse Recovery Charge 365 nC V -25V RR DD t Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L . on S D * Current is limited by package Thermal Resistance Parameter Min Typ Max Units Test Conditions R Junction-to-Case 1.0 C/W thJC Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com