PD - 94020A IRF5NJ540 HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5) 100V, N-CHANNEL Product Summary Part Number BV RDS(on) ID DSS IRF5NJ540 100V 0.052 22A* Fifth Generation HEXFET power MOSFETs from SMD-0.5 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features: fast switching speed and ruggedized device design Low RDS(on) that HEXFET power MOSFETs are well known for, Avalanche Energy Ratings provides the designer with an extremely efficient device Dynamic dv/dt Rating for use in a wide variety of applications. Simple Drive Requirements These devices are well-suited for applications such Ease of Paralleling as switching power supplies, motor controls, invert- Hermetically Sealed ers, choppers, audio amplifiers and high-energy pulse Surface Mount circuits. Light Weight Absolute Maximum Ratings Parameter Units I V = 10V, T = 25C Continuous Drain Current 22* D GS C A I V = 10V, T = 100C Continuous Drain Current 16 D GS C I Pulsed Drain Current 88 DM P T = 25C Max. Power Dissipation 75 W D C Linear Derating Factor 0.60 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 200 mJ AS I Avalanche Current 16 A AR E Repetitive Avalanche Energy 7.5 mJ AR dv/dt Peak Diode Recovery dv/dt 4.1 V/ns T Operating Junction -55 to 150 J o T Storage Temperature Range C STG Package Mounting Surface Temperature 300 (for 5 s) Weight 1.0 g * Current is limited by package For footnotes refer to the last page www.irf.com 1 7/13/01IRF5NJ540 Electrical Characteristics Tj = 25C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BV Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250 A DSS GS D BV / T Temperature Coefficient of Breakdown 0.11 V/C Reference to 25C, I = 1.0mA DSS J D Voltage R Static Drain-to-Source On-State 0.052 V = 10V, I = 16A DS(on) GS D Resistance V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250 A GS(th) DS GS D g Forward Transconductance 11 S ( )V = 50V, I = 16A fs DS DS I Zero Gate Voltage Drain Current 25 V = 100V ,V =0V DSS DS GS A 250 V = 80V, DS V = 0V, T =125C GS J I Gate-to-Source Leakage Forward 100 V = 20V GSS GS nA I Gate-to-Source Leakage Reverse -100 V = -20V GSS GS Q Total Gate Charge 104 V =10V, I = 16A g GS D Q Gate-to-Source Charge 20 nC V = 80V gs DS Q Gate-to-Drain (Miller) Charge 43 gd t Turn-On Delay Time 24 V = 50V, I = 16A, d(on) DD D t Rise Time 125 V =10V, R = 7.5 r GS G ns t Turn-Off Delay Time 86 d(off) t Fall Time 82 f L + L Total Inductance 4.0 S D Measured from the center of nH drain pad to center of source pad C Input Capacitance 1487 V = 0V, V = 25V iss GS DS C Output Capacitance 353 pF f = 1.0MHz oss C Reverse Transfer Capacitance 182 rss Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions I Continuous Source Current (Body Diode) 22* S A I Pulse Source Current (Body Diode) 88 SM V Diode Forward Voltage 1.3 V T = 25C, I = 16A, V = 0V j SD S GS t Reverse Recovery Time 240 nS Tj = 25C, I = 16A, di/dt 100A/ s rr F Q Reverse Recovery Charge 1.67 CV 50V RR DD t Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L . on S D * Current is limited by package Thermal Resistance Parameter Min Typ Max Units Test Conditions R Junction-to-Case 1.67 thJC C/W Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com