IR MOSFET StrongIRFET IRF60R217 Application D V 60V DSS Brushed Motor drive applications BLDC Motor drive applications R typ. 8.0m DS(on) Battery powered circuits G Half-bridge and full-bridge topologies max 9.9m Synchronous rectifier applications S I 58A D Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters D DC/AC Inverters S Benefits G Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA D-Pak Enhanced body diode dV/dt and dI/dt Capability IRF60R217 Lead-Free, RoHS Compliant G D S Gate Drain Source Base part number Package Type Standard Pack Orderable Part Number Form Quantity Tape and Reel 2000 IRF60R217 IRF60R217 D-Pak 30 60 I = 35A D 25 50 20 40 T = 125C J 15 30 10 20 5 10 T = 25C J 0 0 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175 T , Case Temperature (C) C V Gate -to -Source Voltage (V) GS, Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage 1 2016-01-05 R , Drain- o -Source On Resistance (m t ) DS(on) I , Drain Current (A) D IRF60R217 Absolute Maximum Rating Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 58 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 41 A D C GS I Pulsed Drain Current 217 DM P T = 25C Maximum Power Dissipation 83 W D C Linear Derating Factor 0.56 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and J -55 to + 175 T Storage Temperature Range STG C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Avalanche Characteristics E Single Pulse Avalanche Energy 85 AS (Thermally limited) mJ E Single Pulse Avalanche Energy 124 AS (Thermally limited) I Avalanche Current A AR See Fig 15, 16, 23a, 23b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 1.8 JC R Junction-to-Ambient (PCB Mount) 50 C/W JA R Junction-to-Ambient 110 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.047 V/C Reference to 25C, I = 1mA D (BR)DSS J 8.0 9.9 V = 10V, I = 35A GS D R Static Drain-to-Source On-Resistance m DS(on) 10 V = 6.0V, I = 18A GS D V Gate Threshold Voltage 2.1 3.7 V V = V , I = 50A GS(th) DS GS D 1.0 V = 60V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V = 60V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS R Gate Resistance 2.0 G Notes: Repetitive rating pulse width limited by max. junction temperature. Limited by T , starting T = 25C, L = 0.14mH, R = 50 , I = 35A, V =10V. Jmax J G AS GS I 35A, di/dt 862A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS R is measured at T approximately 90C. J When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994.please refer to application note to AN-994: