PD - 94005B
IRF630N
IRF630NS
IRF630NL
Advanced Process Technology
Dynamic dv/dt Rating
HEXFET Power MOSFET
175C Operating Temperature
D
Fast Switching
V = 200V
DSS
Fully Avalanche Rated
Ease of Paralleling
R = 0.30
Simple Drive Requirements
DS(on)
G
Description
Fifth Generation HEXFET Power MOSFETs from I = 9.3A
D
International Rectifier utilize advanced processing S
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
2
The D Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
2
TO-220AB
D Pak TO-262
highest power capability and the lowest possible on-
IRF630N
IRF630NS IRF630NL
resistance in any existing surface mount package. The
2
D Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF630NL) is available for low-
profile application.
Absolute Maximum Ratings
Parameter Max. Units
I @ T = 25C Continuous Drain Current, V @ 10V 9.3
D C GS
I @ T = 100C Continuous Drain Current, V @ 10V 6.5 A
D C GS
I Pulsed Drain Current 37
DM
P @T = 25C Power Dissipation 82 W
D C
Linear Derating Factor 0.5 W/C
V Gate-to-Source Voltage 20 V
GS
E Single Pulse Avalanche Energy 94 mJ
AS
I Avalanche Current 9.3 A
AR
E Repetitive Avalanche Energy 8.2 mJ
AR
dv/dt Peak Diode Recovery dv/dt 8.1 V/ns
T Operating Junction and -55 to +175
J
T Storage Temperature Range
STG C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm)
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10/08/04IRF630N/S/L
Electrical Characteristics @ T = 25C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V Drain-to-Source Breakdown Voltage 200 V V = 0V, I = 250A
(BR)DSS GS D
V /T Breakdown Voltage Temp. Coefficient 0.26 V/C Reference to 25C, I = 1mA
(BR)DSS J D
R Static Drain-to-Source On-Resistance 0.30 V = 10V, I = 5.4A
DS(on) GS D
V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A
GS(th) DS GS D
g Forward Transconductance 4.9 S V = 50V, I = 5.4A
fs DS D
25 V = 200V, V = 0V
DS GS
I Drain-to-Source Leakage Current
A
DSS
250 V = 160V, V = 0V, T = 150C
DS GS J
Gate-to-Source Forward Leakage 100 V = 20V
GS
I nA
GSS
Gate-to-Source Reverse Leakage -100 V = -20V
GS
Q Total Gate Charge 35 I = 5.4A
g D
Q Gate-to-Source Charge 6.5 nC V = 160V
gs DS
Q Gate-to-Drain Mille) Charge 17 V = 10V
gd GS
t Turn-On Delay Time 7.9 V = 100V
d(on) DD
t Rise Time 14 I = 5.4A
r D
ns
t Turn-Off Delay Time 27 R = 13
d(off) G
t Fall Time 15 R = 18
f D
D
Between lead,
L Internal Drain Inductance 4.5
D
6mm (0.25in.)
nH
G
from package
L Internal Source Inductance
7.5
S
and center of die contact
S
C Input Capacitance 575 V = 0V
iss GS
C Output Capacitance 89 V = 25V
oss DS
C Reverse Transfer Capacitance 25 pF = 1.0MHz
rss
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
D
I Continuous Source Current MOSFET symbol
S
9.3
(Body Diode) showing the
G
I Pulsed Source Current integral reverse
SM
37
S
(Body Diode) p-n junction diode.
V Diode Forward Voltage 1.3 V T = 25C, I = 5.4A, V = 0V
SD J S GS
t Reverse Recovery Time 117 176 ns T = 25C, I = 5.4A
rr J F
Q Reverse Recovery Charge 542 813 nC di/dt = 100A/s
rr
t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L )
on S D
Thermal Resistance
Parameter Typ. Max. Units
R Junction-to-Case 1.83
JC
R Case-to-Sink, Flat, Greased Surface 0.50 C/W
CS
R Junction-to-Ambient 62
JA
R Junction-to-Ambient (PCB mount) 40
JA
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