PD - 95047A IRF630NPbF IRF630NSPbF Advanced Process Technology IRF630NLPbF Dynamic dv/dt Rating HEXFET Power MOSFET 175C Operating Temperature Fast Switching D V = 200V Fully Avalanche Rated DSS Ease of Paralleling Simple Drive Requirements R = 0.30 DS(on) G Lead-Free Description I = 9.3A D Fifth Generation HEXFET Power MOSFETs from S International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. 2 The D Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- 2 TO-220AB D Pak TO-262 resistance in any existing surface mount package. The IRF630NPbF IRF630NSPbF IRF630NLPbF 2 Pak is suitable for high current applications because of its D low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF630NL) is available for low- profile application. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 9.3 D C GS I T = 100C Continuous Drain Current, V 10V 6.5 A D C GS I Pulsed Drain Current 37 DM P T = 25C Power Dissipation 82 W D C Linear Derating Factor 0.5 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 94 mJ AS I Avalanche Current 9.3 A AR E Repetitive Avalanche Energy 8.2 mJ AR dv/dt Peak Diode Recovery dv/dt 8.1 V/ns T Operating Junction and -55 to +175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm) www.irf.com 1 07/23/10IRF630N/S/LPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 200 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.26 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.30 V = 10V, I = 5.4A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 4.9 S V = 50V, I = 5.4A fs DS D 25 V = 200V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 160V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS Q Total Gate Charge 35 I = 5.4A g D Q Gate-to-Source Charge 6.5 nC V = 160V gs DS Q Gate-to-Drain Mille) Charge 17 V = 10V gd GS t Turn-On Delay Time 7.9 V = 100V d(on) DD t Rise Time 14 I = 5.4A r D ns t Turn-Off Delay Time 27 R = 13 d(off) G t Fall Time 15 R = 18 f D D Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH G from package L Internal Source Inductance 7.5 S and center of die contact S C Input Capacitance 575 V = 0V iss GS C Output Capacitance 89 V = 25V oss DS C Reverse Transfer Capacitance 25 pF = 1.0MHz rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 9.3 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 37 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 5.4A, V = 0V SD J S GS t Reverse Recovery Time 117 176 ns T = 25C, I = 5.4A rr J F Q Reverse Recovery Charge 542 813 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.83 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS R Junction-to-Ambient 62 JA R Junction-to-Ambient (PCB mount) 40 JA www.irf.com 2