PD - 94006A IRF640N IRF640NS IRF640NL Advanced Process Technology HEXFET Power MOSFET Dynamic dv/dt Rating 175C Operating Temperature D Fast Switching V = 200V DSS Fully Avalanche Rated Ease of Paralleling R = 0.15 DS(on) Simple Drive Requirements G Description I = 18A Fifth Generation HEXFET Power MOSFETs from D S International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. 2 The D Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the 2 TO-220AB D Pak TO-262 highest power capability and the lowest possible on- IRF640N IRF640NS IRF640NL resistance in any existing surface mount package. The 2 D Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF640NL) is available for low- profile application. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 18 D C GS I T = 100C Continuous Drain Current, V 10V 13 A D C GS I Pulsed Drain Current 72 DM P T = 25C Power Dissipation 150 W D C Linear Derating Factor 1.0 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 247 mJ AS I Avalanche Current 18 A AR E Repetitive Avalanche Energy 15 mJ AR dv/dt Peak Diode Recovery dv/dt 8.1 V/ns T Operating Junction and -55 to +175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbf in (1.1N m) www.irf.com 1 10/08/04IRF640N/S/L Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 200 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.25 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.15 V = 10V, I = 11A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 6.8 S V = 50V, I = 11A fs DS D 25 V = 200V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 160V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS Q Total Gate Charge 67 I = 11A g D Q Gate-to-Source Charge 11 nC V = 160V gs DS Q Gate-to-Drain Mille) Charge 33 V = 10V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 10 V = 100V d(on) DD t Rise Time 19 I = 11A r D ns t Turn-Off Delay Time 23 R = 2.5 d(off) G t Fall Time 5.5 R = 9.0, See Fig. 10 f D D Between lead, L Internal Drain Inductance D 6mm (0.25in.) nH G from package L Internal Source Inductance S and center of die contact S C Input Capacitance 1160 V = 0V iss GS C Output Capacitance 185 V = 25V oss DS C Reverse Transfer Capacitance 53 pF = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 18 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 72 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 11A, V = 0V SD J S GS t Reverse Recovery Time 167 251 ns T = 25C, I = 11A rr J F Q Reverse Recovery Charge 929 1394 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.0 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS R Junction-to-Ambient 62 JA R Junction-to-Ambient (PCB mount) 40 JA www.irf.com 2