IRF6616PbF IRF6616TRPbF DirectFET Power MOSFET RoHS compliant containing no lead or bormide V V R R DSS GS DS(on) DS(on) Low Profile (<0.7 mm) 40V max 20V max 3.7m 10V 4.6m 4.5V Dual Sided Cooling Compatible Q Q Q Q Q V Ultra Low Package Inductance g tot gd gs2 rr oss gs(th) Optimized for High Frequency Switching 29nC 9.4nC 2.4nC 33nC 15nC 1.8V Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques Lead-Free DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP Description TM The IRF6616 combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6616 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6616 is ideal for secondary side synchronous rectification applications up to 100W, and can also be used in some non-isolated synchronous buck applications where 30V devices do not provide enough voltage headroom. Absolute Maximum Ratings Parameter Max. Units V 40 DS Drain-to-Source Voltage V Gate-to-Source Voltage 20 V GS I T = 25C Continuous Drain Current, V 10V 19 A GS D Continuous Drain Current, V 10V 15 I T = 70C A D A GS Continuous Drain Current, V 10V 106 I T = 25C GS D C I Pulsed Drain Current 150 DM E 36 Single Pulse Avalanche Energy mJ AS I Avalanche Current 15 A AR 6 12 I = 15A D I = 19A D 5 V = 32V 10 DS VDS= 20V 4 8.0 T = 125C J 3 6.0 2 4.0 1 2.0 T = 25C J 0 0 0 1020 3040 2.0 4.0 6.0 8.0 10.0 Q Total Gate Charge (nC) V , Gate-to-Source Voltage (V) G GS Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage Click on this section to link to the appropriate technical paper. T measured with thermocouple mounted to top (Drain) of part. C Click on this section to link to the DirectFET Website. Repetitive rating pulse width limited by max. junction temperature. Starting T = 25C, L = 0.32mH, R = 25, I =15A. Surface mounted on 1 in. square Cu board, steady state. J G AS www.irf.com 1 05/23/07 Typical R (on) ( m) DS V , Gate- -Source Voltage (V) to GS Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV V = 0V, I = 250A Drain-to-Source Breakdown Voltage 40 V DSS GS D Reference to 25C, I = 1mA V /T Breakdown Voltage Temp. Coefficient 37 mV/C D DSS J R V = 10V, I = 19A Static Drain-to-Source On-Resistance 3.7 5.0 m DS(on) GS D V = 4.5V, I = 15A 4.6 6.2 GS D V V = V , I = 250A Gate Threshold Voltage 1.35 1.8 2.25 V GS(th) DS GS D V / T Gate Threshold Voltage Coefficient -5.5 mV/C GS(th) J I V = 32V, V = 0V Drain-to-Source Leakage Current 1.0 A DSS DS GS V = 32V, V = 0V, T = 125C 150 DS GS J V = 20V I Gate-to-Source Forward Leakage 100 nA GS GSS V = -20V Gate-to-Source Reverse Leakage -100 GS V = 20V, I = 15A gfs Forward Transconductance 75 S DS D Q Total Gate Charge 29 44 g V = 20V Q Pre-Vth Gate-to-Source Charge 8.6 DS gs1 V = 4.5V Q Post-Vth Gate-to-Source Charge 2.4 nC gs2 GS I = 15A Q Gate-to-Drain Charge 9.4 D gd Q Gate Charge Overdrive 8.6 See Fig. 15 godr Q Switch Charge (Q + Q ) 12 sw gs2 gd V = 16V, V = 0V Q Output Charge 15 nC DS GS oss R Gate Resistance 1.3 G V = 16V, V = 4.5V t Turn-On Delay Time 15 DD GS d(on) t I = 15A Rise Time 19 r D t Turn-Off Delay Time 21 ns Clamped Inductive Load d(off) t Fall Time 4.4 f C V = 0V Input Capacitance 3765 iss GS V = 20V C Output Capacitance 560 pF oss DS C = 1.0MHz Reverse Transfer Capacitance 285 rss Diode Characteristics Conditions Parameter Min. Typ. Max. Units I Continuous Source Current 110 MOSFET symbol S showing the (Body Diode) A I Pulsed Source Current 150 integral reverse SM p-n junction diode. (Body Diode) T = 25C, I = 15A, V = 0V V Diode Forward Voltage 0.8 1.0 V J S GS SD t T = 25C, I = 15A Reverse Recovery Time 15 23 ns rr J F Q Reverse Recovery Charge 33 50 nC di/dt = 500A/s rr Pulse width 400s duty cycle 2%. Repetitive rating pulse width limited by max. junction temperature. 2 www.irf.com