IRF6618PbF IRF6618TRPbF RoHs Compliant DirectFET Power MOSFET Lead-Free (Qualified up to 260C Reflow) V V R R Application Specific MOSFETs DSS GS DS(on) DS(on) 30V max 20V max 2.2m 10V 3.4m 4.5V Ideal for CPU Core DC-DC Converters Low Conduction Losses Q Q Q Q Q V g tot gd gs2 rr oss gs(th) High Cdv/dt Immunity 43nC 15nC 4.0nC 46nC 28nC 1.64V Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques DirectFET ISOMETRIC Applicable DirectFET Package/Layout Pad (see p.7, 8 for details) SQ SX ST MQ MX MT Description TM The IRF6618PbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6618PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6618PbF has been optimized for parameters that are critical in synchronous buck converters SyncFET sockets. Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 V DS V Gate-to-Source Voltage 20 GS I T = 25C 170 C Continuous Drain Current, V 10V D GS I T = 25C 30 A A Continuous Drain Current, VGS 10V D T = 70C I Continuous Drain Current, V 10V 24 D A GS I 240 DM Pulsed Drain Current E AS 210 mJ Single Pulse Avalanche Energy I AR 24 A Avalanche Current 6 6.0 I = 30A I = 24A D D 5 5.0 V = 24V DS V = 15V DS 4 4.0 T = 125C J 3 3.0 2 2.0 T = 25C 1 1.0 J 0 0.0 2 3 4 5 6 7 8 9 10 0 102030405060 V Gate -to -Source Voltage (V) Q Total Gate Charge (nC) GS, G Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage Fig 2. Total Gate Charge vs. Gate-to-Source Voltage Click on this section to link to the appropriate technical paper. T measured with thermocouple mounted to top (Drain) of part. C Click on this section to link to the DirectFET Website. Repetitive rating pulse width limited by max. junction temperature. Surface mounted on 1 in. square Cu board, steady state. Starting T = 25C, L = 0.75mH, R = 25, I = 24A. J G AS www.irf.com 1 08/17/07 Typical R (m) DS(on) V , Gate-to-Source Voltage (V) GS Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A DSS GS D V /T DSS J Breakdown Voltage Temp. Coefficient 23 mV/C Reference to 25C, I = 1mA D m R Static Drain-to-Source On-Resistance 1.7 2.2 V = 10V, I = 30A DS(on) GS D 3.4 V = 4.5V, I = 24A GS D V GS(th) Gate Threshold Voltage 1.35 1.64 2.35 V V = V , I = 250A DS GS D V /T GS(th) J Gate Threshold Voltage Coefficient -5.7 mV/C 5.0 V = 30V, V = 0V DS GS I Drain-to-Source Leakage Current 1.0 A V = 24V, V = 0V DSS DS GS 150 V = 24V, V = 0V, T = 150C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 100 S V = 15V, I = 24A DS D Q Total Gate Charge 43 65 g Q Pre-Vth Gate-to-Source Charge 12 V = 15V gs1 DS Q gs2 Post-Vth Gate-to-Source Charge 4.0 nC V = 4.5V GS Q Gate-to-Drain Charge 15 23 I = 24A gd D Q Gate Charge Overdrive 12 See Fig. 14 godr Q Switch Charge (Q + Q ) sw gs2 gd 19 Q Output Charge 28 nC V = 15V, V = 0V oss DS GS R Gate Resistance 1.0 2.2 G t d(on) Turn-On Delay Time 21 V = 15V, V = 4.5V DD GS t Rise Time 71 I = 24A r D t Turn-Off Delay Time 27 ns Clamped Inductive Load d(off) t f Fall Time 8.1 See Fig. 15 & 16 C iss Input Capacitance 5640 V = 0V GS C Output Capacitance 1260 pF V = 15V oss DS C Reverse Transfer Capacitance 570 = 1.0MHz rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 89 MOSFET symbol D S (Body Diode) A showing the I G SM Pulsed Source Current 240 integral reverse S (Body Diode) p-n junction diode. V Diode Forward Voltage 0.78 1.2 V T = 25C, I = 24A, V = 0V SD J S GS t rr Reverse Recovery Time 43 65 ns T = 25C, I = 24A J F Q di/dt = 100A/s See Fig. 17 Reverse Recovery Charge 46 69 nC rr Repetitive rating pulse width limited by max. junction temperature. Pulse width 400s duty cycle 2%. 2 www.irf.com