DIGITAL AUDIO MOSFET IRF6641TRPbF Key Parameters Features Latest MOSFET silicon technology V 200 V DS Key parameters optimized for Class-D audio amplifier applications R typ. V = 10V 51 DS(ON) GS m Low R for improved efficiency DS(on) Low Qg for better THD and improved efficiency Qg typ. 34 nC Low Qrr for better THD and lower EMI Low package stray inductance for reduced ringing and lower R typ. 1.0 G(int) EMI Can deliver up to 400 W per channel into 8load in half-bridge configuration amplifier Dual sided cooling compatible Compatible with existing surface mount technologies RoHS compliant, halogen-free Lead-free (qualified up to 260C reflow) DirectFET ISOMETRIC MZ Applicable DirectFET Outline and Substrate Outline (see p.6, 7 for details) SQ SX ST SH MQ MX MT MN MZ Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI. The IRF6641PbF device utilizes DirectFET packaging technology. DirectFET packaging technology offers lower parasitic inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The DirectFET package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier applications. Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRF6641PbF DirectFET Medium Can Tape and Reel 4800 IRF6641TRPbF Absolute Maximum Ratings Parameter Max. Units V Gate-to-Source Voltage 20 V GS I T = 25C Continuous Drain Current, V 10V 26 D C GS I T = 25C Continuous Drain Current, V 10V 4.6 D A GS I T = 70C Continuous Drain Current, V 10V 3.7 A D A GS I Pulsed Drain Current 37 DM P T = 25C Power Dissipation 89 D C P T = 25C Power Dissipation 2.8 W D A P T = 70C Power Dissipation 1.8 D A E Single Pulse Avalanche Energy 46 mJ AS I Avalanche Current 11 A AR Linear Derating Factor 0.022 W/C T Operating Junction and -40 to + 150 C J T Storage Temperature Range STG Notes through are on page 9 1 www.irf.com 2013 International Rectifier July 1, 2013 IRF6641TRPbF Thermal Resistance Parameter Typ. Max. Units Junction-to-Ambient 45 R JA R Junction-to-Ambient 12.5 JA Junction-to-Ambient 20 C/W R JA R Junction-to-Case 1.4 JC Junction-to-PCB Mounted 1.0 R J-PCB Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 200 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.23 V/C Reference to 25C, I = 1.0mA BV /T D DSS J R Static Drain-to-Source On-Resistance 51 59.9 V = 10V, I = 5.5A DS(on) m GS D V Gate Threshold Voltage 3.0 4.0 4.9 V V = V , I = 150A GS(th) DS GS D Gate Threshold Voltage Coefficient -11 mV/C V GS(th) I Drain-to-Source Leakage Current 20 A V = 200V, V = 0V DSS DS GS 250 V = 160V, V = 0V, T =125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic T = 25C (unless otherwise specified) J gfs Forward Transconductance 13 S V = 10V, I = 5.5A DS D Q Total Gate Charge 34 48 g Q Pre-VthGate-to-Source Charge 8.7 V = 100V DS gs1 nC V = 10V Q Post-Vth Gate-to-Source Charge 1.9 gs2 GS Q Gate-to-Drain Charge 9.5 14 I = 5.5A gd D Q Gate Charge Overdrive 14 godr Q Switch Charge (Q + Q) 11 V = 16V, V = 0V sw gs2 gd DS GS t Turn-On Delay Time 16 V = 100V, V = 10V d(on) DD GS t Rise Time 11 ns I = 5.5A D r t Turn-Off Delay Time 31 R = 6.2 d(off) G t Fall Time 6.5 f C Input Capacitance 2290 V = 0V iss GS C Output Capacitance 240 V = 25V DS oss C Reverse Transfer Capacitance 46 pF = 1.0MHz rss C Output Capacitance 1780 V =0V, V =1.0V, =1.0MHz oss GS DS C Output Capacitance 100 V =0V, V =160V, =1.0MHz oss GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current 26 A MOSFET symbol S (Body Diode) showing the G I Pulsed Source Current 37 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 5.5A, V = 0V SD J S GS t Reverse Recovery Time 85 130 ns T = 25C, I = 5.5A,V = 100V rr J F DD Q Reverse Recovery Charge 320 480 nC di/dt = 100A/s rr 2 www.irf.com 2013 International Rectifier July 1, 2013