DIGITAL AUDIO MOSFET IRF6643TRPbF Key Parameters Features Latest MOSFET silicon technology V 150 V DS Key parameters optimized for Class-D audio amplifier applications R typ. V = 10V 29 DS(ON) GS m Low R for improved efficiency DS(on) Low Qg for better THD and improved efficiency Qg typ. 39 nC Low Qrr for better THD and lower EMI Low package stray inductance for reduced ringing and lower R typ. 0.9 G(int) EMI Can deliver up to 200 W per channel into 8 load in half-bridge configuration amplifier Dual sided cooling compatible Compatible with existing surface mount technologies RoHS compliant, halogen-free Lead-free (qualified up to 260C reflow) DirectFET ISOMETRIC MZ Applicable DirectFET Outline and Substrate Outline (see p.6, 7 for details) SH SJ ST SH MQ MX MT MN MZ Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI. The IRF6643PbF device utilizes DirectFET packaging technology. DirectFET packaging technology offers lower parasitic inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The DirectFET package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier applications. Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRF6643TRPbF DirectFET Medium Can Tape and Reel 4800 IRF6643TRPbF Absolute Maximum Ratings Parameter Max. Units V Gate-to-Source Voltage 20 V GS I T = 25C Continuous Drain Current, V 10V 35 D C GS I T = 25C Continuous Drain Current, V 10V 6.2 D A GS I T = 70C Continuous Drain Current, V 10V 5.0 A D A GS I Pulsed Drain Current 76 DM P T = 25C Power Dissipation 89 D C P T = 25C Power Dissipation 2.8 W D A P T = 70C Power Dissipation 1.8 D A E Single Pulse Avalanche Energy 50 mJ AS I Avalanche Current 7.6 A AR Linear Derating Factor 0.022 W/C T Operating Junction and -40 to + 150 C J T Storage Temperature Range STG Notes through are on page 9 1 www.irf.com 2013 International Rectifier May 31, 2013 IRF6643TRPbF Thermal Resistance Parameter Typ. Max. Units Junction-to-Ambient 45 R JA R Junction-to-Ambient 12.5 JA Junction-to-Ambient 20 C/W R JA R Junction-to-Case 1.4 JC Junction-to-PCB Mounted 1.0 R J-PCB Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 150 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.18 V/C Reference to 25C, I = 1.0mA BV /T D DSS J R Static Drain-to-Source On-Resistance 29 34.5 V = 10V, I = 7.6A DS(on) m GS D V Gate Threshold Voltage 3.0 4.0 4.9 V V = V , I = 150A GS(th) DS GS D Gate Threshold Voltage Coefficient -11 mV/C V GS(th) I Drain-to-Source Leakage Current 20 A V = 150V, V = 0V DSS DS GS 250 V = 120V, V = 0V, T =125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS R Gate Resistance 0.8 G Dynamic T = 25C (unless otherwise specified) J gfs Forward Transconductance 16 S V = 10V, I = 7.6A DS D Q Total Gate Charge 39 55 g V = 75V Q Pre-VthGate-to-Source Charge 9.6 gs1 DS Q Post-Vth Gate-to-Source Charge 2.2 V = 10V gs2 GS Q Gate-to-Drain Charge 11 17 nC I = 7.6A D gd Q Gate Charge Overdrive 16 godr Q Switch Charge (Q + Q) 13 sw gs2 gd t Turn-On Delay Time 9.2 d(on) ns V = 75V, V = 10V t Rise Time 5.0 r DD GS I = 7.6A t Turn-Off Delay Time 13 d(off) D t Fall Time 4.4 f C Input Capacitance 2340 V = 0V iss GS V = 25V C Output Capacitance 300 oss DS pF = 1.0MHz C Reverse Transfer Capacitance 61 rss C Output Capacitance 1950 V =0V, V =1.0V, =1.0MHz oss GS DS C Output Capacitance 140 V =0V, V =80V, =1.0MHz oss GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 58 (Body Diode) showing the G A integral reverse I Pulsed Source Current SM 76 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 7.6A, V = 0V SD J S GS t Reverse Recovery Time 67 100 ns T = 25C, I = 7.6A,V = 50V rr J F DD di/dt = 100A/s Q Reverse Recovery Charge 190 280 nC rr 2 www.irf.com 2013 International Rectifier May 31, 2013