IRF6648PbF IRF6648TRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) RoHs Compliant Lead-Free (Qualified up to 260C Reflow) V V R DSS GS DS(on) Application Specific MOSFETs 60V min 20V max 5.5m 10V Optimized for Synchronous Rectification for 5V to 12V outputs Q Q Q Q Q V g tot gd gs2 rr oss gs(th) Low Conduction Losses Ideal for 24V input Primary Side Forward Converters 36nC 14nC 2.7nC 37nC 11nC 4.0V Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) MN SH SJ SP MZ MN Description The IRF6648PbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compati- ble with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6648PbF is an optimized switch for use in synchronous rectification circuits with 5-12Vout, and is also ideal for use as a primary side switch in 24Vin forward converters. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance. Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRF6648TRPbF DirectFET Medium Can Tape and Reel 4800 IRF6648TRPbF Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 60 DS V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 86 D C GS I T = 70C Continuous Drain Current, V 10V (Silicon Limited) 69 A D C GS I Pulsed Drain Current 260 DM E Single Pulse Avalanche Energy 47 mJ AS I Avalanche Current 34 A AR 12.0 60 I = 17A I = 17A D D 10.0 50 V = 48V DS 8.0 V = 30V 40 DS 6.0 30 4.0 20 T = 125C J 2.0 10 T = 25C J 0.0 0 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 40 Q , Total Gate Charge (nC) G V Gate -to -Source Voltage (V) GS, Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage Fig 1. Typical On-Resistance vs. Gate Voltage Notes TC measured with thermocouple mounted to top (Drain) of part. Click on this section to link to the appropriate technical paper. Repetitive rating pulse width limited by max. junction temperature. Click on this section to link to the DirectFET Website. Starting T = 25C, L = 0.082mH, R = 25 , I = 34A. J G AS Surface mounted on 1 in. square Cu board, steady state. 1 2017-04-06 Typic l R (m ) a DS(on) V , Gate-to-Source Voltage (V) GS IRF6648TRPbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250A DSS GS D Breakdown Voltage Temp. Coefficient 0.076 V/C Reference to 25c, I = 1mA V / T DSS J D R Static Drain-to-Source On-Resistance 5.5 7.0 m V = 10V, I = 17A DS(on) GS D V Gate Threshold Voltage 3.0 4.0 4.9 V GS(th) V = V , I = 150A DS GS D V / T Gate Threshold Voltage Temp. Coefficient -11 mV/C GS(th) J 20 V = 60 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 48 V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 31 S V = 10V, I = 17A DS D Q Total Gate Charge 36 50 g Q Pre Vth Gate-to-Source Charge 7.5 V = 30V gs1 DS Q Post Vth Gate-to-Source Charge 2.7 V = 10V gs2 GS nC Q Gate-to-Drain Charge 14 21 I = 17A gd D Q Gate Charge Overdrive 12 See Fig 15 godr Q Switch Charge (Q Q 17 sw gs2 + gd) Q Output Charge 21 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.0 G(Internal) t Turn-On Delay Time 16 V = 30V, V = 10V d(on) DD GS t Rise Time 29 I = 17A r D ns t Turn-Off Delay Time 28 R = 6.2 d(off) G t Fall Time 13 See Fig 16 & 17 f C Input Capacitance 2120 V = 0V iss GS C Output Capacitance 600 V = 25V oss DS C Reverse Transfer Capacitance 170 pF = 1.0MHz rss C Output Capacitance 2450 V = 0V, V = 1.0V, f =1.0MHz oss GS DS C Output Capacitance 440 V = 0V, V = 48V, f =1.0MHz oss GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol D I 81 S (Body Diode) showing the A G Pulsed Source Current integral reverse I 260 SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 17A, V = 0V SD J S GS t Reverse Recovery Time 31 47 ns T = 25C, I = 17A,V = 30V rr J F DD di/dt = 100A/s See Fig. 18 Q Reverse Recovery Charge 37 56 nC rr Notes: Repetitive rating pulse width limited by max. junction temperature. Pulse width 400s duty cycle 2%. 2 2017-04-06