IRF6655PbF IRF6655TRPbF DirectFET Power MOSFET RoHs Compliant R V V DS(on) Lead-Free (Qualified up to 260C Reflow) DSS GS 53m 10V Application Specific MOSFETs 100V max 20V max Ideal for High Performance Isolated Converter Q Q Q Q Q V g tot gd gs2 rr oss gs(th) Primary Switch Socket 8.7nC 2.8nC 0.58nC 37nC 4.5nC 4.0V Ideal for Control FET sockets in 36V-75V in Synchronous Buck applications Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible DirectFET ISOMETRIC Compatible with existing Surface Mount Techniques Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST SH MQ MX MT MN Description TM The IRF6655PbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a micro-8, and only 0.7mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra- red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6655PbF is optimized for low power primary side bridge topologies in isolated DC-DC applications, and for high side control FET sockets in non-isolated synchronous buck DC-DC applications for use in wide range universal Telecom systems (36V 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal perfor- mance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters. Absolute Maximum Ratings Parameter Max. Units V 100 Drain-to-Source Voltage V DS Gate-to-Source Voltage 20 V GS I T = 25C Continuous Drain Current, V 10V 4.2 GS D A Continuous Drain Current, V 10V 3.4 I T = 70C A A GS D I T = 25C Continuous Drain Current, V 10V 19 GS D C 34 I Pulsed Drain Current DM E 11 Single Pulse Avalanche Energy mJ AS I Avalanche Current 5.0 A AR 200 12.0 V = 80V 180 I = 5.0A I = 5.0A DS D D 10.0 160 V = 50V DS 140 V = 20V 8.0 DS 120 T = 125C J 100 6.0 80 4.0 60 40 2.0 T = 25C J 20 0 0.0 4 6 8 10 12 14 16 18 024 6 8 10 Q Total Gate Charge (nC) G V Gate -to -Source Voltage (V) GS, Fig 2. Typical On-Resistance Vs. Gate Voltage Fig 1. Typical On-Resistance vs. Gate Voltage T measured with thermocouple mounted to top (Drain) of part. Click on this section to link to the appropriate technical paper. C Repetitive rating pulse width limited by max. junction temperature. Click on this section to link to the DirectFET Website. Starting T = 25C, L = 0.89mH, R = 25, I = 5.0A. Surface mounted on 1 in. square Cu board, steady state. J G AS www.irf.com 1 08/25/06 Typic (m) al R D S(on) V , Gate-to-Source Voltage (V) G S Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV V = 0V, I = 250A Drain-to-Source Breakdown Voltage 100 V GS D DSS Reference to 25C, I = 1mA V /T Breakdown Voltage Temp. Coefficient 0.12 V/C D DSS J R V = 10V, I = 5.0A Static Drain-to-Source On-Resistance 53 62 m DS(on) GS D V = V , I = 25A V Gate Threshold Voltage 2.8 4.0 4.8 V DS GS D GS(th) V /T Gate Threshold Voltage Coefficient -11 mV/C GS(th) J I V = 100V, V = 0V Drain-to-Source Leakage Current 20 A DS GS DSS V = 80V, V = 0V, T = 125C 250 DS GS J I V = 20V Gate-to-Source Forward Leakage 100 nA GS GSS V = -20V Gate-to-Source Reverse Leakage -100 GS V = 10V, I = 5.0A gfs Forward Transconductance 6.6 S DS D Q Total Gate Charge 8.7 11.7 g Q V = 50V Pre-Vth Gate-to-Source Charge 2.1 gs1 DS = 10V Q V Post-Vth Gate-to-Source Charge 0.58 nC GS gs2 I = 5.0A Q Gate-to-Drain Charge 2.8 4.2 gd D Q Gate Charge Overdrive 3.2 See Fig. 15 godr Q Switch Charge (Q + Q ) 3.4 sw gs2 gd Q V = 16V, V = 0V Output Charge 4.5 nC DS GS oss R Gate Resistance 1.9 2.9 G t V = 50V, V = 10V Turn-On Delay Time 7.4 DD GS d(on) I = 5.0A t Rise Time 2.8 r D t R =6.0 Turn-Off Delay Time 14 ns d(off) G t Fall Time 4.3 See Fig. 16 & 17 f C V = 0V Input Capacitance 530 iss GS C V = 25V Output Capacitance 110 pF DS oss C Reverse Transfer Capacitance 29 = 1.0MHz rss C V = 0V, V = 1.0V, f=1.0MHz Output Capacitance 510 GS DS oss V = 0V, V = 80V, f=1.0MHz C Output Capacitance 67 oss GS DS Diode Characteristics Conditions Parameter Min. Typ. Max. Units D I Continuous Source Current 38 MOSFET symbol S showing the (Body Diode) A G I Pulsed Source Current 34 integral reverse SM S (Body Diode) p-n junction diode. = 25C, I = 5.0A, V = 0V V T Diode Forward Voltage 1.3 V J S GS SD T = 25C, I = 5.0A, V = 25V t Reverse Recovery Time 31 47 ns rr J F DD Q di/dt = 100A/s See Fig. 18 Reverse Recovery Charge 37 56 nC rr Repetitive rating pulse width limited by max. junction temperature. Pulse width 400s duty cycle 2%. 2 www.irf.com