PD - 97243A IRF6662PbF IRF6662TRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) RoHs Compliant R V V DS(on) DSS GS Lead-Free (Qualified up to 260C Reflow) 17.5m 10V 100V max 20V max Application Specific MOSFETs Q Q Q Q Q V Ideal for High Performance Isolated Converter g tot gd gs2 rr oss gs(th) Primary Switch Socket 22nC 6.8nC 1.2nC 50nC 11nC 3.9V Optimized for Synchronous Rectification Low Conduction Losses High Cdv/dt Immunity S Low Profile (<0.7mm) D G D S Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques DirectFET ISOMETRIC MZ Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MZ Description TM The IRF6662PbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6662PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters. Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 100 V DS 20 V Gate-to-Source Voltage GS Continuous Drain Current, V 10V 8.3 I T = 25C A GS D I T = 70C Continuous Drain Current, V 10V 6.6 A GS D A Continuous Drain Current, V 10V 47 I T = 25C GS D C Pulsed Drain Current 66 I DM E Single Pulse Avalanche Energy 39 mJ AS I 4.9 Avalanche Current A AR 100 12.0 I = 4.9A I = 4.9A D D V = 80V 10.0 DS 80 V = 50V DS 8.0 V = 20V 60 DS 6.0 T = 125C J 40 4.0 20 2.0 T = 25C J 0 0.0 4 6 8 10 12 14 16 0 5 10 15 20 25 Q Total Gate Charge (nC) G V Gate -to -Source Voltage (V) GS, Fig 2. Typical Total Gate Charge vs. Fig 1. Typical On-Resistance vs. Gate Voltage Gate-to-Source Voltage Notes: T measured with thermocouple mounted to top (Drain) of part. Click on this section to link to the appropriate technical paper. C Repetitive rating pulse width limited by max. junction temperature. Click on this section to link to the DirectFET Website. Starting T = 25C, L = 3.2mH, R = 25, I = 4.9A. Surface mounted on 1 in. square Cu board, steady state. J G AS www.irf.com 1 08/25/06 Typical R (m) DS(on) V , Gate-to-Source Voltage (V) GSIRF6662PbF Static T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units BV V = 0V, I = 250A Drain-to-Source Breakdown Voltage 100 V DSS GS D = 1mA V /T Reference to 25C, I Breakdown Voltage Temp. Coefficient 0.10 V/C D DSS J V = 10V, I = 8.2A R Static Drain-to-Source On-Resistance 17.5 22 m DS(on) GS D V V = V , I = 100A Gate Threshold Voltage 3.0 3.9 4.9 V DS GS D GS(th) V /T Gate Threshold Voltage Coefficient -9.7 mV/C GS(th) J I V = 100V, V = 0V Drain-to-Source Leakage Current 20 A DSS DS GS V = 80V, V = 0V, T = 125C 250 DS GS J I V = 20V Gate-to-Source Forward Leakage 100 nA GSS GS V = -20V Gate-to-Source Reverse Leakage -100 GS V = 10V, I = 4.9A gfs Forward Transconductance 11 S DS D Q Total Gate Charge 22 31 g V = 50V Q Pre-Vth Gate-to-Source Charge 4.9 gs1 DS Q V = 10V Post-Vth Gate-to-Source Charge 1.2 nC GS gs2 I = 4.9A Q Gate-to-Drain Charge 6.8 10 gd D Q Gate Charge Overdrive 9.1 See Fig. 15 godr Q Switch Charge (Q + Q ) 8.0 sw gs2 gd Q V = 16V, V = 0V Output Charge 11 nC oss DS GS R Gate Resistance 1.2 G t V = 50V, V = 10V Turn-On Delay Time 11 d(on) DD GS t I = 4.9A Rise Time 7.5 D r =6.2 t Turn-Off Delay Time 24 ns R d(off) G t See Fig. 17 Fall Time 5.9 f V = 0V C Input Capacitance 1360 GS iss C V = 25V Output Capacitance 270 pF oss DS C Reverse Transfer Capacitance 61 = 1.0MHz rss C V = 0V, V = 1.0V, f=1.0MHz Output Capacitance 1340 oss GS DS = 0V, V = 80V, f=1.0MHz C V Output Capacitance 160 GS DS oss Diode Characteristics Conditions Parameter Min. Typ. Max. Units D I MOSFET symbol Continuous Source Current 2.5 S (Body Diode) A showing the G I integral reverse Pulsed Source Current 66 SM S (Body Diode) p-n junction diode. V T = 25C, I = 4.9A, V = 0V Diode Forward Voltage 1.3 V SD J S GS T = 25C, I = 4.9A, V = 50V t Reverse Recovery Time 34 51 ns J F DD rr Q Reverse Recovery Charge 50 75 nC di/dt = 100A/s See Fig. 18 rr Notes: Repetitive rating pulse width limited by max. junction temperature. Pulse width 400s duty cycle 2%. 2 www.irf.com