IRF6665PbF IRF6665TRPbF Key Parameters Features V 100 V DS Latest MOSFET Silicon technology Key parameters optimized for Class-D audio amplifier R typ. V = 10V 53 m DS(on) GS applications Q typ. 8.7 nC g Low R for improved efficiency DS(on) Low Q for better THD and improved efficiency R typ. g 1.9 G(int) Low Q for better THD and lower EMI rr Low package stray inductance for reduced ringing and lower EMI Can deliver up to 100W per channel into 8 with no heatsink Dual sided cooling compatible Compatible with existing surface mount technologies RoHS compliant containing no lead or bromide Lead-Free (Qualified up to 260C Reflow) DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details) SQ SX ST SH MQ MX MT MN Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI. TM TM The IRF6665PbF device utilizes DirectFET packaging technology. DirectFET packaging technology offers lower parasitic inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI TM performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The TM DirectFET package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resis- tance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier applications. Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 100 V DS V GS Gate-to-Source Voltage 20 10V I T = 25C Continuous Drain Current, V GS 19 D C I T = 25C 4.2 A Continuous Drain Current, V 10V D A GS I T = 70C Continuous Drain Current, V 10V 3.4 D A GS I 34 Pulsed Drain Current DM Maximum Power Dissipation P T = 25C 42 W D C P T = 25C Power Dissipation A 2.2 D P T = 70C Power Dissipation 1.4 D A Linear Derating Factor 0.017 W/C T Operating Junction and -40 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units R Junction-to-Ambient JA 58 C/W R Junction-to-Ambient JA 12.5 R Junction-to-Ambient 20 JA R Junction-to-Case JC 3.0 R Junction-to-PCB Mounted J-PCB 1.4 Notes through are on page 2 www.irf.com 1 08/25/06IRF6665PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V = 0V, I = 250A V Drain-to-Source Breakdown Voltage 100 V (BR)DSS GS D Reference to 25C, I = 1mA V /T Breakdown Voltage Temp. Coefficient 0.12 V/C D (BR)DSS J R Static Drain-to-Source On-Resistance 53 62 V = 10V, I = 5.0A m GS D DS(on) V V = V , I = 250A Gate Threshold Voltage 3.0 5.0 V DS GS D GS(th) I V = 100V, V = 0V Drain-to-Source Leakage Current 20 A DS GS DSS V = 80V, V = 0V, T = 125C 250 DS GS J I V = 20V Gate-to-Source Forward Leakage 100 nA GSS GS V = -20V Gate-to-Source Reverse Leakage -100 GS R Internal Gate Resistance 1.9 2.9 G(int) Dynamic T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units V = 10V, I = 5.0A gfs Forward Transconductance 6.6 S DS D Q Total Gate Charge 8.4 13 V = 50V g DS Q Pre-Vth Gate-to-Source Charge 2.2 V = 10V gs1 GS Q Post-Vth Gate-to-Source Charge 0.64 I = 5.0A gs2 D Q Gate-to-Drain Charge 2.8 nC See Fig. 6 and 17 gd Q Gate Charge Overdrive 2.8 godr Q Switch Charge (Q + Q ) 3.4 sw gs2 gd t V = 50V Turn-On Delay Time 7.4 DD d(on) t I = 5.0A Rise Time 2.8 r D R = 6.0 t Turn-Off Delay Time 14 ns d(off) G V = 10V t Fall Time 4.3 f GS V = 0V C Input Capacitance 530 iss GS V = 25V C Output Capacitance 110 oss DS C Reverse Transfer Capacitance 29 pF = 1.0MHz rss C V = 0V, V = 1.0V, = 1.0MHz Output Capacitance 510 GS DS oss C V = 0V, V = 80V, = 1.0MHz Output Capacitance 67 GS DS oss C eff. V = 0V, V = 0V to 80V Effective Output Capacitance 130 GS DS oss Avalanche Characteristics Typ. Max. Parameter Units E Single Pulse Avalanche Energy 11 mJ AS I Avalanche Current 5.0 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current 38 MOSFET symbol S (Body Diode) A showing the G integral reverse I Pulsed Source Current 34 SM S p-n junction diode. (Body Diode) T = 25C, I = 5.0A, V = 0V V Diode Forward Voltage 1.3 V J S GS SD t Reverse Recovery Time 31 ns T = 25C, I = 5.0A, V = 25V J F DD rr Q Reverse Recovery Charge 37 nC di/dt = 100A/s rr Used double sided cooling , mounting pad. Repetitive rating pulse width limited by Mounted on minimum footprint full size board with max. junction temperature. metalized back and with small clip heatsink. Starting T = 25C, L = 0.89mH, R = 25, I = 5.0A. J G AS T measured with thermal couple mounted to top C Surface mounted on 1 in. square Cu board. (Drain) of part. Pulse width 400s duty cycle 2%. R is measured at T of approximately 90C. J C eff. is a fixed capacitance that gives the same oss Based on testing done using a typical device & evaluation board charging time as C while V is rising from 0 to 80% V . oss DS DSS at Vbus=45V, f =400KHz, and T =25C. The delta case SW A temperature T is 55C. C 2 www.irf.com