97133 IRF6674TRPbF DirectFET Power MOSFET RoHS Compliant V V R DSS GS DS(on) Lead-Free (Qualified up to 260C Reflow) 60V max 20V max 9.0m 10V Application Specific MOSFETs Q Q V Ideal for High Performance Isolated Converter g tot gd gs(th) Primary Switch Socket 24nC 8.3nC 4.0V Optimized for Synchronous Rectification Low Conduction Losses High Cdv/dt Immunity Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SH SJ SP MZ MN Description TM The IRF6674PbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6674PbF is optimized for primary side sockets in forward and push-pull isolated DC-DC topologies, for 48V and 36V-60V input voltage range systems. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC- DC converters. Absolute Maximum Ratings Parameter Max. Units V 60 Drain-to-Source Voltage V DS 20 V Gate-to-Source Voltage GS Continuous Drain Current, V 10V 13.4 I T = 25C GS D A Continuous Drain Current, V 10V 10.7 I T = 70C A GS D A Continuous Drain Current, V 10V 67 I T = 25C GS D C 134 I Pulsed Drain Current DM E 98 Single Pulse Avalanche Energy mJ AS I 13.4 Avalanche Current A AS 50 14 I = 13.4A I = 13.4A V = 48V D D DS 12 40 V = 30V DS 10 30 8 6 20 T = 125C J 4 10 2 T = 25C J 0 0 4 6 8 10 12 14 16 010 20 30 V , Gate-to-Source Voltage (V) GS Q Total Gate Charge (nC) G Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage T measured with thermocouple mounted to top (Drain) of part. Click on this section to link to the appropriate technical paper. C Repetitive rating pulse width limited by max. junction temperature. Click on this section to link to the DirectFET Website. Starting T = 25C, L = 0.272mH, R = 25, I = 13.4A. Surface mounted on 1 in. square Cu board, steady state. J G AS www.irf.com 1 4/24/08 Typical R (on) (m) DS V , Gate-to-Source V oltage (V) GS Electrical Characteristic T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV V = 0V, I = 250 A Drain-to-Source Breakdown Voltage 60 V DSS GS D Reference to 25C, I = 1mA V /T Breakdown Voltage Temp. Coefficient 0.07 V/C D DSS J V = 10V, I = 13.4A R Static Drain-to-Source On-Resistance 9.0 11 m DS(on) GS D V = V , I = 100 A V Gate Threshold Voltage 3.0 4.0 4.9 V GS(th) DS GS D V /T Gate Threshold Voltage Coefficient -11 mV/C GS(th) J V = 60V, V = 0V I Drain-to-Source Leakage Current 20 A DSS DS GS V = 48V, V = 0V, T = 125C 250 DS GS J V = 20V I Gate-to-Source Forward Leakage 100 nA GSS GS V = -20V Gate-to-Source Reverse Leakage -100 GS V = 25V, I = 13.4A gfs Forward Transconductance 16 S DS D Q Total Gate Charge 24 36 g V = 30V Q Pre-Vth Gate-to-Source Charge 5.4 DS gs1 = 10V Q V Post-Vth Gate-to-Source Charge 1.9 nC GS gs2 Q I = 13.4A Gate-to-Drain Charge 8.3 12 D gd Q Gate Charge Overdrive 8.4 See Fig. 15 godr Q Switch Charge (Q + Q ) 10.2 sw gs2 gd Q V = 16V, V = 0V Output Charge 14 nC DS GS oss R Gate Resistance 1.0 G t V = 30V, V = 10V Turn-On Delay Time 7.0 DD GS d(on) t I = 13.4A Rise Time 12 D r t R = 6.2 Turn-Off Delay Time 12 ns d(off) G t Fall Time 8.7 f C V = 0V Input Capacitance 1350 GS iss C V = 25V Output Capacitance 390 pF DS oss C = 1.0MHz Reverse Transfer Capacitance 105 rss C V = 0V, V = 1.0V, f=1.0MHz Output Capacitance 1580 oss GS DS C V = 0V, V = 48V, f=1.0MHz Output Capacitance 290 oss GS DS Diode Characteristics Conditions Parameter Min. Typ. Max. Units I Continuous Source Current 67 MOSFET symbol D S (Body Diode) T = 25C showing the A J G I integral reverse Pulsed Source Current 134 SM S p-n junction diode. (Body Diode) V T = 25C, I = 13.4A, V = 0V Diode Forward Voltage 1.3 V J S GS SD t T = 25C, I = 13.4A, V = 50V Reverse Recovery Time 32 48 ns J F DD rr Q di/dt = 100A/ s Reverse Recovery Charge 36 54 nC rr Repetitive rating pulse width limited by max. junction temperature. Pulse width 400s duty cycle 2%. 2 www.irf.com