IRF6710S2TRPbF IRF6710S2TR1PbF DirectFET Power MOSFET RoHS Compliant Containing No Lead and Halogen Free Low Profile (<0.7 mm) V V R R Dual Sided Cooling Compatible DSS GS DS(on) DS(on) Ultra Low Package Inductance 25V max 20V max 4.5m 10V 9.0m 4.5V Optimized for High Frequency Switching Q Q Q Q Q V Ideal for CPU Core DC-DC Converters g tot gd gs2 rr oss gs(th) Optimized for Control FET Application 8.8nC 3.0nC 1.3nC 8.0nC 4.4nC 1.8V Compatible with existing Surface Mount Techniques 100% Rg tested DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline S1 S2 SB M2 M4 L4 L6 L8 Description TM The IRF6710S2TRPbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack- age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6710S2TRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6710S2TRPbF has been optimized for the control FET socket of synchronous buck operating from 12 volt bus converters. Absolute Maximum Ratings Max. Parameter Units V 25 Drain-to-Source Voltage V DS 20 V Gate-to-Source Voltage GS Continuous Drain Current, V 10V 12 I T = 25C A GS D Continuous Drain Current, V 10V 10 I T = 70C A A GS D Continuous Drain Current, V 10V 37 I T = 25C C GS D 100 I Pulsed Drain Current DM E 24 Single Pulse Avalanche Energy mJ AS I 10 Avalanche Current A AR 20 12 I = 12A I = 10A V = 20V D D DS 10 VDS= 13V 15 8 10 6 T = 125C J 4 5 2 T = 25C J 0 0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 0 4 8 12 162024 V , Gate-to-Source Voltage (V) GS Q Total Gate Charge (nC) G Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage Click on this section to link to the appropriate technical paper. T measured with thermocouple mounted to top (Drain) of part. C Repetitive rating pulse width limited by max. junction temperature. Click on this section to link to the DirectFET Website. Starting T = 25C, L = 0.49mH, R = 25, I = 10A. Surface mounted on 1 in. square Cu board, steady state. J G AS www.irf.com 1 03/16/10 Typical R (on) (m) DS V , Gate-to-S ource Voltage (V) GS Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV V = 0V, I = 250A Drain-to-Source Breakdown Voltage 25 V DSS GS D Reference to 25C, I = 1mA V /T Breakdown Voltage Temp. Coefficient 17 mV/C D DSS J R V = 10V, I = 12A Static Drain-to-Source On-Resistance 4.5 5.9 m DS(on) GS D V = 4.5V, I = 10A 9.0 11.9 GS D V = V , I = 25A V Gate Threshold Voltage 1.4 1.8 2.4 V GS(th) DS GS D V /T Gate Threshold Voltage Coefficient -7.0 mV/C GS(th) J V = 20V, V = 0V I Drain-to-Source Leakage Current 1.0 A DS GS DSS V = 20V, V = 0V, T = 125C 150 DS GS J V = 20V I Gate-to-Source Forward Leakage 100 nA GS GSS V = -20V Gate-to-Source Reverse Leakage -100 GS V = 15V, I =10A gfs Forward Transconductance 21 S DS D Q Total Gate Charge 8.8 13 g V = 13V Q Pre-Vth Gate-to-Source Charge 2.3 DS gs1 Q V = 4.5V Post-Vth Gate-to-Source Charge 1.3 nC GS gs2 I = 10A Q Gate-to-Drain Charge 3.0 D gd Q Gate Charge Overdrive 2.2 See Fig. 15 godr Q Switch Charge (Q + Q ) 4.3 sw gs2 gd Q V = 10V, V = 0V Output Charge 4.4 nC oss DS GS R Gate Resistance 0.3 G t V = 13V, V = 4.5V Turn-On Delay Time 7.9 d(on) DD GS t I = 10A Rise Time 20 r D t R = 6.2 Turn-Off Delay Time 5.2 ns d(off) G t Fall Time 6.0 f C V = 0V Input Capacitance 1190 iss GS C V = 13V Output Capacitance 320 pF oss DS C Reverse Transfer Capacitance 150 = 1.0MHz rss Diode Characteristics Conditions Parameter Min. Typ. Max. Units I MOSFET symbol Continuous Source Current 19 S showing the (Body Diode) A I integral reverse Pulsed Source Current 100 SM p-n junction diode. (Body Diode) V T = 25C, I = 10A, V = 0V Diode Forward Voltage 1.0 V SD J S GS t T = 25C, I =10A Reverse Recovery Time 14 21 ns rr J F Q Reverse Recovery Charge 8.0 12 nC di/dt = 200A/s rr Repetitive rating pulse width limited by max. junction temperature. Pulse width 400s duty cycle 2%. 2 www.irf.com