DirectFET Power MOSFET RoHS Compliant and Halogen Free V V R R DSS GS DS(on) DS(on) Low Profile (<0.7 mm) 25V max 20V max 3.8m 10V 6.7m 4.5V Dual Sided Cooling Compatible Ultra Low Package Inductance Q Q Q Q Q V g tot gd gs2 rr oss gs(th) Optimized for High Frequency Switching 12nC 4.0nC 1.7nC 14nC 10nC 1.9V Ideal for CPU Core DC-DC Converters Optimized for both Sync.FET and some Control FET application Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques 100% Rg tested DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP Description TM The IRF6712SPbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack- age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6712SPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6712SPbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses. Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity IRF6712SPbF DirectFET Small Can Tape and Reel 4800 IRF6712STRPbF Tape and Reel 1000 IRF6712STR1PbF Absolute Maximum Ratings Parameter Max. Units V 25 DS Drain-to-Source Voltage V V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V 17 I T = 25C A GS D Continuous Drain Current, V 10V 13 I T = 70C GS A D A I T = 25C Continuous Drain Current, V 10V 68 GS D C 130 I Pulsed Drain Current DM E Single Pulse Avalanche Energy 13 mJ AS I Avalanche Current 13 A AR 12 14.0 I = 17A I = 13A D D 10 12.0 V = 20V DS V = 13V 10.0 DS 8 T = 125C 8.0 J 6 6.0 4 4.0 T = 25C J 2 2.0 0 0.0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 0 5 10 15 20 25 30 35 Q Total Gate Charge (nC) V Gate -to -Source Voltage (V) G GS, Fig 1. Typical On-Resistance Vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage T measured with thermocouple mounted to top (Drain) of part. Click on this section to link to the appropriate technical paper. C Repetitive rating pulse width limited by max. junction temperature. Click on this section to link to the DirectFET Website. Starting T = 25C, L = 0.14mH, R = 25 , I = 13A. Surface mounted on 1 in. square Cu board, steady state. J G AS pical Ty R (m ) DS ) (on V , Gate-to-Source Volta ge (V) GS IRF6712SPbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 25 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 18 mV/C Reference to 25C, I = 1mA DSS J D m R Static Drain-to-Source On-Resistance 3.8 4.9 V = 10V, I = 17A DS(on) GS D 6.7 8.7 V = 4.5V, I = 13A GS D V Gate Threshold Voltage 1.4 1.9 2.4 V V = V , I = 50A GS(th) DS GS D V / T Gate Threshold Voltage Coefficient -6.1 mV/C GS(th) J I Drain-to-Source Leakage Current 1.0 A V = 25V, V = 0V DSS DS GS 150 V = 25V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 40 S V = 13V, I = 13A DS D Q Total Gate Charge 12 18 g Q Pre-Vth Gate-to-Source Charge 2.9 V = 13V gs1 DS Q Post-Vth Gate-to-Source Charge 1.7 nC V = 4.5V gs2 GS Q Gate-to-Drain Charge 4.0 I = 13A gd D Q Gate Charge Overdrive 3.5 See Fig. 15 godr Q Switch Charge (Q + Q ) 5.8 sw gs2 gd Q Output Charge 10 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.7 3.0 G t Turn-On Delay Time 11 V = 13V, V = 4.5V d(on) DD GS t Rise Time 40 ns I = 13A r D t Turn-Off Delay Time 14 R = 1.8 d(off) G t Fall Time 12 See Fig. 17 f C Input Capacitance 1570 V = 0V iss GS C Output Capacitance 490 pF V = 13V oss DS C Reverse Transfer Capacitance 210 = 1.0MHz rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions MOSFET symbol I Continuous Source Current 45 S showing the (Body Diode) A I Pulsed Source Current 130 integral reverse SM p-n junction diode. (Body Diode) V Diode Forward Voltage 0.81 1.0 V T = 25C, I = 13A, V = 0V SD J S GS t Reverse Recovery Time 17 26 ns T = 25C, I = 13A rr J F di/dt = 200A/s Q Reverse Recovery Charge 14 21 nC rr Pulse width 400s duty cycle 2%.