IRF6724MPbF IRF6724MTRPbF DirectFET Power MOSFET RoHs Compliant and Halogen Free V V R R DSS GS DS(on) DS(on) Low Profile (<0.7 mm) 30V max 20V max 1.9m 10V 2.7m 4.5V Dual Sided Cooling Compatible Ultra Low Package Inductance Q Q Q Q Q V g tot gd gs2 rr oss gs(th) Optimized for High Frequency Switching 33nC 10nC 3.9nC 34nC 20nC 1.8V Ideal for CPU Core DC-DC Converters Optimized for Sync. FET socket of Sync. Buck Converter Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques 100% Rg tested DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP Description TM The IRF6724MPbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6724MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6724MPbF has been optimized for parameters that are critical in synchronous buck including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6724MPbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications. Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 V DS V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 27 GS D A I T = 70C Continuous Drain Current, V 10V 21 A GS D A I T = 25C Continuous Drain Current, V 10V 150 GS D C I Pulsed Drain Current 212 DM E Single Pulse Avalanche Energy 12 mJ AS I Avalanche Current 21 A AR 8 12 I = 21A V = 24V I = 27A D D DS 10 VDS= 15V 6 8 4 6 T = 125C J 4 2 T = 25C J 2 0 0 2.0 4.0 6.0 8.0 10.0 0 204060 80 100 V , Gate-to-Source Voltage (V) GS Q Total Gate Charge (nC) G Fig 1. Typical On-Resistance Vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage T measured with thermocouple mounted to top (Drain) of part. Click on this section to link to the appropriate technical paper. C Repetitive rating pulse width limited by max. junction temperature. Click on this section to link to the DirectFET Website. Starting T = 25C, L = 0.051mH, R = 25, I = 21A. Surface mounted on 1 in. square Cu board, steady state. J G AS www.irf.com 1 04/30/09 Typical R (on) (m) DS V , Gate-to-Source Voltage (V) GS Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V = 0V, I = 250A BV Drain-to-Source Breakdown Voltage 30 V GS D DSS Reference to 25C, I = 1mA V /T Breakdown Voltage Temp. Coefficient 22 mV/C D DSS J V = 10V, I = 27A R Static Drain-to-Source On-Resistance 1.90 2.50 m GS D DS(on) V = 4.5V, I = 21A 2.70 3.50 GS D V = V , I = 100A V Gate Threshold Voltage 1.35 1.8 2.35 V DS GS D GS(th) V /T Gate Threshold Voltage Coefficient -6.1 mV/C GS(th) J V = 24V, V = 0V I Drain-to-Source Leakage Current 1.0 A DS GS DSS V = 24V, V = 0V, T = 125C 150 DS GS J V = 20V I Gate-to-Source Forward Leakage 100 nA GS GSS V = -20V Gate-to-Source Reverse Leakage -100 GS gfs Forward Transconductance 130 S V = 15V, I =21A DS D Q Total Gate Charge 33 54 g Q V = 15V Pre-Vth Gate-to-Source Charge 8.5 gs1 DS Q V = 4.5V Post-Vth Gate-to-Source Charge 3.9 nC GS gs2 Q I = 21A Gate-to-Drain Charge 10 gd D Q Gate Charge Overdrive 11 See Fig. 15 godr Q Switch Charge (Q + Q ) 14 sw gs2 gd Q V = 16V, V = 0V Output Charge 20 nC oss DS GS R Gate Resistance 1.2 2.2 G t V = 15V, V = 4.5V Turn-On Delay Time 11 d(on) DD GS t I = 21A Rise Time 19 r D t R = 1.8 Turn-Off Delay Time 23 ns d(off) G t Fall Time 16 f C V = 0V Input Capacitance 4404 iss GS V = 15V C Output Capacitance 885 pF oss DS C Reverse Transfer Capacitance 424 = 1.0MHz rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions I MOSFET symbol Continuous Source Current 150 S showing the (Body Diode) A I integral reverse Pulsed Source Current 212 SM (Body Diode) p-n junction diode. V T = 25C, I = 21A, V = 0V Diode Forward Voltage 1.0 V SD J S GS t T = 25C, I =21A Reverse Recovery Time 20 30 ns rr J F Q Reverse Recovery Charge 34 51 nC di/dt = 300A/s rr Repetitive rating pulse width limited by max. junction temperature. Pulse width 400s duty cycle 2%. 2 www.irf.com