IRF6726MPbF IRF6726MTRPbF DirectFET Power MOSFET RoHS Compliant Containing No Lead and Bromide V V R R DSS GS DS(on) DS(on) Low Profile (<0.7 mm) 30V max 20V max 1.3m 10V 1.9m 4.5V Dual Sided Cooling Compatible Q Q Q Q Q V Ultra Low Package Inductance g tot gd gs2 rr oss gs(th) Optimized for High Frequency Switching 51nC 16nC 5.4nC 45nC 28nC 1.7V Ideal for CPU Core DC-DC Converters Optimized for both Sync.FET and some Control FET application Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques 100% Rg tested DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP Description TM The IRF6726MPbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack- age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6726MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6726MPbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses. Absolute Maximum Ratings Max. Parameter Units V Drain-to-Source Voltage 30 V DS 20 V Gate-to-Source Voltage GS Continuous Drain Current, V 10V 32 I T = 25C GS D A I T = 70C Continuous Drain Current, V 10V 25 A GS D A Continuous Drain Current, V 10V 180 I T = 25C C GS D I Pulsed Drain Current 250 DM E 260 Single Pulse Avalanche Energy mJ AS I 25 AR Avalanche Current A 4 5.0 I = 32A I = 25A D D V = 24V DS 4.0 3 V = 15V DS 3.0 2 T = 125C J 2.0 1 1.0 T = 25C J 0 0.0 0 5 10 15 20 0 102030405060 Q , Total Gate Charge (nC) G V Gate -to -Source Voltage (V) GS, Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage T measured with thermocouple mounted to top (Drain) of part. Click on this section to link to the appropriate technical paper. C Repetitive rating pulse width limited by max. junction temperature. Click on this section to link to the DirectFET Website. Starting T = 25C, L = 0.82mH, R = 25, I = 25A. Surface mounted on 1 in. square Cu board, steady state. J G AS www.irf.com 1 08/14/07 p Ty ical R (m ) ) DS(on , G V ate-to-Source Voltage (V) G S Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V = 0V, I = 250A BV Drain-to-Source Breakdown Voltage 30 V GS D DSS Reference to 25C, I = 1mA V /T Breakdown Voltage Temp. Coefficient 21 mV/C D DSS J V = 10V, I = 32A R Static Drain-to-Source On-Resistance 1.3 1.7 m GS D DS(on) V = 4.5V, I = 25A 1.9 2.4 GS D V V = V , I = 150A Gate Threshold Voltage 1.35 1.7 2.35 V GS(th) DS GS D V /T Gate Threshold Voltage Coefficient -6.0 mV/C GS(th) J I V = 24V, V = 0V Drain-to-Source Leakage Current 1.0 A DSS DS GS V = 24V, V = 0V, T = 125C 150 DS GS J I V = 20V Gate-to-Source Forward Leakage 100 nA GSS GS V = -20V Gate-to-Source Reverse Leakage -100 GS V = 15V, I = 25A gfs Forward Transconductance 150 S DS D Q Total Gate Charge 51 77 g V = 15V Q Pre-Vth Gate-to-Source Charge 12 gs1 DS Q V = 4.5V Post-Vth Gate-to-Source Charge 5.4 nC GS gs2 I = 25A Q Gate-to-Drain Charge 16 D gd Q Gate Charge Overdrive 18 See Fig. 15 godr Q Switch Charge (Q + Q ) 21 sw gs2 gd Q V = 16V, V = 0V Output Charge 28 nC oss DS GS R Gate Resistance 1.0 1.8 G t V = 15V, V = 4.5V Turn-On Delay Time 20 d(on) DD GS t I = 25A Rise Time 30 ns D r = 1.8 t Turn-Off Delay Time 25 R d(off) G t See Fig. 17 Fall Time 17 f V = 0V C Input Capacitance 6140 GS iss C V = 15V Output Capacitance 1270 pF oss DS C Reverse Transfer Capacitance 590 = 1.0MHz rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions I MOSFET symbol Continuous Source Current 110 S (Body Diode) A showing the I integral reverse Pulsed Source Current 250 SM (Body Diode) p-n junction diode. V T = 25C, I = 25A, V = 0V Diode Forward Voltage 0.77 1.0 V SD J S GS T = 25C, I = 25A t Reverse Recovery Time 27 41 ns J F rr Q di/dt = 500A/s Reverse Recovery Charge 45 68 nC rr Pulse width 400s duty cycle 2%. 2 www.irf.com