IRF6727MPbF IRF6727MTRPbF DirectFET Power MOSFET RoHS Compliant and Halogen Free V V R R DSS GS DS(on) DS(on) Low Profile (<0.7 mm) 30V max 20V max 1.22m 10V 1.84m 4.5V Dual Sided Cooling Compatible Q Q Q Q Q V Ultra Low Package Inductance g tot gd gs2 rr oss gs(th) Optimized for High Frequency Switching 49nC 16nC 5.3nC 45nC 28nC 1.8V Ideal for CPU Core DC-DC Converters Optimized for both Sync.FET and some Control FET application Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques 100% Rg tested DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MT MP MX Description TM The IRF6727MPbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack- age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6727MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6727MPbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses. Absolute Maximum Ratings Parameter Max. Units V 30 Drain-to-Source Voltage V DS 20 V Gate-to-Source Voltage GS I T = 25C Continuous Drain Current, V 10V 32 GS D A 10V 26 I T = 70C Continuous Drain Current, V A A GS D Continuous Drain Current, V 10V 180 I T = 25C GS D C I Pulsed Drain Current 260 DM E 250 Single Pulse Avalanche Energy mJ AS I 25 AR Avalanche Current A 4 5.0 I = 32A I = 25A D D V = 24V DS 4.0 V = 15V 3 DS 3.0 2 T = 125C 2.0 J 1 1.0 T = 25C J 0 0.0 0 5 10 15 20 0 5 10 15 20 25 30 35 40 45 50 55 Q , Total Gate Charge (nC) G V Gate -to -Source Voltage (V) GS, Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage T measured with thermocouple mounted to top (Drain) of part. Click on this section to link to the appropriate technical paper. C Repetitive rating pulse width limited by max. junction temperature. Click on this section to link to the DirectFET Website. Starting T = 25C, L = 0.77mH, R = 25, I = 25A. Surface mounted on 1 in. square Cu board, steady state. J G AS www.irf.com 1 04/30/09 Typical R (m) DS(on) , G V ate-to-Source Voltage (V) G S Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V = 0V, I = 250A BV Drain-to-Source Breakdown Voltage 30 V GS D DSS Reference to 25C, I = 1mA V /T Breakdown Voltage Temp. Coefficient 22 mV/C D DSS J V = 10V, I = 32A R Static Drain-to-Source On-Resistance 1.22 1.7 m GS D DS(on) V = 4.5V, I = 25A 1.84 2.4 GS D V Gate Threshold Voltage 1.35 1.8 2.35 V V = V , I = 100A DS GS D GS(th) V /T Gate Threshold Voltage Coefficient -6.5 mV/C GS(th) J I V = 24V, V = 0V Drain-to-Source Leakage Current 1.0 A DSS DS GS V = 24V, V = 0V, T = 125C 150 DS GS J I V = 20V Gate-to-Source Forward Leakage 100 nA GSS GS V = -20V Gate-to-Source Reverse Leakage -100 GS V = 15V, I = 25A gfs Forward Transconductance 160 S DS D Q Total Gate Charge 49 74 g V = 15V Q Pre-Vth Gate-to-Source Charge 12 gs1 DS V = 4.5V Q Post-Vth Gate-to-Source Charge 5.3 nC GS gs2 I = 25A Q Gate-to-Drain Charge 16 D gd Q Gate Charge Overdrive 16 See Fig. 15 godr Q Switch Charge (Q + Q ) 21.3 sw gs2 gd Q V = 16V, V = 0V Output Charge 28 nC oss DS GS R Gate Resistance 1.5 2.5 G t V = 15V, V = 4.5V Turn-On Delay Time 21 d(on) DD GS = 25A t Rise Time 31 ns I D r t R = 1.8 Turn-Off Delay Time 24 d(off) G t See Fig. 17 Fall Time 16 f V = 0V C Input Capacitance 6190 iss GS C V = 15V Output Capacitance 1280 pF oss DS C Reverse Transfer Capacitance 610 = 1.0MHz rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 110 MOSFET symbol S (Body Diode) A showing the I integral reverse Pulsed Source Current 260 SM (Body Diode) p-n junction diode. V T = 25C, I = 25A, V = 0V Diode Forward Voltage 0.77 1.0 V SD J S GS T = 25C, I = 25A t Reverse Recovery Time 27 41 ns J F rr Q di/dt = 250A/s Reverse Recovery Charge 45 68 nC rr Pulse width 400s duty cycle 2%. 2 www.irf.com