IRF6785MTRPbF Key Parameters Features V 200 V DS Latest MOSFET Silicon technology Key parameters optimized for Class-D audio amplifier m R typ. V = 10V 85 DS(on) GS applications Q typ. 26 nC Low R for improved efficiency g DS(on) Low Q for better THD and improved efficiency g R max 3.0 G(int) Low Q for better THD and lower EMI rr Low package stray inductance for reduced ringing and lower EMI Can deliver up to 250W per channel into 8 Load in Half-Bridge Configuration Amplifier Dual sided cooling compatible Compatible with existing surface mount technologies RoHS compliant containing no lead or bromide DirectFET ISOMETRIC Lead-Free (Qualified up to 260C Reflow) Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details) SQ SX ST SH MQ MX MT MN MZ Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI. TM TM The IRF6785MPbF device utilizes DirectFET packaging technology. DirectFET packaging technology offers lower parasitic inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI TM performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The TM DirectFET package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resis- tance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier applications. Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 200 V DS V GS Gate-to-Source Voltage 20 Continuous Drain Current, V 10V I T = 25C C GS 19 D I T = 25C 3.4 A Continuous Drain Current, V 10V D A GS I T = 70C Continuous Drain Current, V 10V 2.7 D A GS I 27 Pulsed Drain Current DM P T = 25C Maximum Power Dissipation 57 W D C P T = 25C Power Dissipation A 2.8 D P T = 70C Power Dissipation 1.8 D A E Single Pulse Avalanche Energy AS 33 mJ I Avalanche Current AR 8.4 A Linear Derating Factor 0.022 W/C T Operating Junction and -40 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units R Junction-to-Ambient JA 45 C/W R Junction-to-Ambient JA 12.5 R Junction-to-Ambient JA 20 R Junction-to-Case JC 1.4 R Junction-to-PCB Mounted 1.4 J-PCB Notes through are on page 2 www.irf.com 1 04/18/07IRF6785MTRPbF Static T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units V V = 0V, I = 250A Drain-to-Source Breakdown Voltage 200 V GS D (BR)DSS Reference to 25C, I = 1mA V /T Breakdown Voltage Temp. Coefficient 0.22 V/C (BR)DSS J D V = 10V, I = 4.2A R Static Drain-to-Source On-Resistance 85 100 m DS(on) GS D V = V , I = 100A V Gate Threshold Voltage 3.0 5.0 V GS(th) DS GS D V = 200V, V = 0V I Drain-to-Source Leakage Current 20 A DSS DS GS V = 160V, V = 0V, T = 125C 250 DS GS J I V = 20V Gate-to-Source Forward Leakage 100 nA GS GSS V = -20V Gate-to-Source Reverse Leakage -100 GS R Internal Gate Resistance 3.0 G(int) Dynamic T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units V = 10V, I = 4.2A gfs Forward Transconductance 8.9 S DS D Q V = 100V Total Gate Charge 26 36 g DS Q V = 10V Pre-Vth Gate-to-Source Charge 6.3 gs1 GS = 4.2A Q Post-Vth Gate-to-Source Charge 1.3 I gs2 D Q Gate-to-Drain Charge 6.9 nC See Fig. 6 and 17 gd Q Gate Charge Overdrive 11.5 godr Q Switch Charge (Q + Q ) 8.2 sw gs2 gd = 100V t Turn-On Delay Time 6.2 V DD d(on) t I = 4.2A Rise Time 8.6 D r t R = 6.0 Turn-Off Delay Time 7.2 ns d(off) G t V = 10V Fall Time 14 GS f C V = 0V Input Capacitance 1500 iss GS V = 25V C Output Capacitance 160 oss DS C Reverse Transfer Capacitance 31 pF = 1.0MHz rss V = 0V, V = 1.0V, = 1.0MHz C Output Capacitance 1140 oss GS DS V = 0V, V = 160V, = 1.0MHz C Output Capacitance 69 oss GS DS C eff. V = 0V, V = 0V to 160V Effective Output Capacitance 140 GS DS oss Diode Characteristics Conditions Parameter Min. Typ. Max. Units D MOSFET symbol I Continuous Source Current 19 S showing the (Body Diode) A G integral reverse I Pulsed Source Current 27 SM S p-n junction diode. (Body Diode) V Diode Forward Voltage 1.3 V T = 25C, I = 4.2A, V = 0V SD J S GS t Reverse Recovery Time 71 ns T = 25C, I = 4.2A, V = 25V DD rr J F Q Reverse Recovery Charge 190 nC di/dt = 100A/s rr Used double sided cooling , mounting pad with large heatsink. Repetitive rating pulse width limited by Mounted on minimum footprint full size board with max. junction temperature. metalized back and with small clip heatsink. Starting T = 25C, L = 0.94mH, R = 25, I = 8.4A. J G AS T measured with thermal couple mounted to top C Surface mounted on 1 in. square Cu board. (Drain) of part. Pulse width 400s duty cycle 2%. R is measured at T of approximately 90C. J C eff. is a fixed capacitance that gives the same oss charging time as C while V is rising from 0 to 80% V . oss DS DSS 2 www.irf.com