IRF6795MPbF IRF6795MTRPbF HEXFET Power MOSFET plus Schottky Diode RoHS Compliant Containing No Lead and Halogen Free V V R R DSS GS DS(on) DS(on) Integrated Monolithic Schottky Diode 25V max 20V max 1.4m 10V 2.4m 4.5V Low Profile (<0.7 mm) Dual Sided Cooling Compatible Q Q Q Q Q V g tot gd gs2 rr oss gs(th) Ultra Low Package Inductance 35nC 10nC 4.8nC 34nC 27nC 1.8V Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for Sync. FET socket of Sync. Buck Converter Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques 100% Rg tested DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MT MP MX Description TM The IRF6795MPbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6795MPbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6795MPbF has been optimized for parameters that are critical in synchronous buck converters Sync FET sockets. Absolute Maximum Ratings Parameter Max. Units V 25 Drain-to-Source Voltage V DS V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 32 GS D A Continuous Drain Current, V 10V 25 I T = 70C A A GS D 160 I T = 25C Continuous Drain Current, V 10V C GS D I Pulsed Drain Current 250 DM E Single Pulse Avalanche Energy 190 mJ AS I 25 Avalanche Current A AR 6 14.0 I = 25A I = 32A D D 12.0 V = 20V 5 DS 10.0 V = 13V DS 4 8.0 6.0 3 T = 125C J 4.0 2 2.0 T = 25C J 1 0.0 0 2 4 6 8 10 12 14 16 18 20 0 10 203040 50607080 90 Q Total Gate Charge (nC) G V Gate -to -Source Voltage (V) GS, Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage T measured with thermocouple mounted to top (Drain) of part. Click on this section to link to the appropriate technical paper. C Repetitive rating pulse width limited by max. junction temperature. Click on this section to link to the DirectFET Website. Starting T = 25C, L = 0.60mH, R = 25 , I = 25A. Surface mounted on 1 in. square Cu board, steady state. J G AS www.irf.com 1 02/10/2010 Typical R (m ) DS(on) V , Gate-to-Source Volta ge (V) GS Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V = 0V, I = 1.0mA BV Drain-to-Source Breakdown Voltage 25 V GS D DSS Reference to 25C, I = 5mA V / T Breakdown Voltage Temp. Coefficient 11 mV/C D DSS J R V = 10V, I = 32A Static Drain-to-Source On-Resistance 1.4 1.8 m GS D DS(on) V = 4.5V, I = 25A 2.4 3.2 GS D V V = V , I = 100A Gate Threshold Voltage 1.35 1.8 2.35 V GS(th) DS GS D V = V , I = 10mA V / T Gate Threshold Voltage Coefficient -4.2 mV/C DS GS D GS(th) J I V = 20V, V = 0V Drain-to-Source Leakage Current 500 A DSS DS GS = 20V, V = 0V, T = 125C 5.0 mA V DS GS J I V = 20V Gate-to-Source Forward Leakage 100 nA GSS GS V = -20V Gate-to-Source Reverse Leakage -100 GS V = 13V, I = 25A gfs Forward Transconductance 100 S DS D Q Total Gate Charge 35 53 g V = 13V Q Pre-Vth Gate-to-Source Charge 8.8 DS gs1 Q V = 4.5V Post-Vth Gate-to-Source Charge 4.8 nC gs2 GS I = 25A Q Gate-to-Drain Charge 10 D gd Q Gate Charge Overdrive 11 See Fig. 15 godr Q Switch Charge (Q + Q ) 14.8 sw gs2 gd V = 16V, V = 0V Q Output Charge 27 nC oss DS GS R Gate Resistance 1.3 2.2 G V = 13V, V = 4.5V t Turn-On Delay Time 16 DD GS d(on) t I = 25A Rise Time 27 ns r D t Turn-Off Delay Time 16 R = 1.8 G d(off) t See Fig. 17 Fall Time 11 f V = 0V C Input Capacitance 4280 GS iss C V = 13V Output Capacitance 1280 pF oss DS C = 1.0MHz Reverse Transfer Capacitance 550 rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions I MOSFET symbol Continuous Source Current 32 S (Body Diode) A showing the I Pulsed Source Current 250 integral reverse SM (Body Diode) p-n junction diode. V T = 25C, I = 25A, V = 0V Diode Forward Voltage 0.75 V J S GS SD t T = 25C, I = 25A Reverse Recovery Time 27 41 ns rr J F Q Reverse Recovery Charge 34 51 nC di/dt = 200A/s rr Pulse width 400s duty cycle 2%. 2 www.irf.com