IRF6811SPbF IRF6811STRPbF DirectFET Power MOSFET RoHS Compliant and Halogen Free V V R R DSS GS DS(on) DS(on) Low Profile (<0.7 mm) 25V max 16V max 2.8m 10V 4.1m 4.5V Dual Sided Cooling Compatible Ultra Low Package Inductance Q Q Q Q Q V g tot gd gs2 rr oss gs(th) Optimized for High Frequency Switching 11nC 4.2nC 1.4nC 23nC 11nC 1.6V Ideal for CPU Core DC-DC Converters Optimized for Control FET Application Compatible with existing Surface Mount Techniques 100% Rg tested Footprint compatible to DirectFET G D S D ISOMETRIC SQ SX ST MQ MX MT MP Description The IRF6811STRPbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech- niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6811STRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6811STRPbF has been optimized for the control FET socket of synchronous buck operating from 12 volt bus converters. Absolute Maximum Ratings Max. Parameter Units V 25 DS Drain-to-Source Voltage V V Gate-to-Source Voltage 16 GS Continuous Drain Current, V 10V 19 I T = 25C A GS D Continuous Drain Current, V 10V 15 I T = 70C GS D A A Continuous Drain Current, V 10V 74 I T = 25C C GS D 150 I Pulsed Drain Current DM E Single Pulse Avalanche Energy 32 mJ AS I Avalanche Current 15 A AR 12 14.0 I = 19A I = 15A D D 12.0 10 V = 20V DS 10.0 8 V = 13V DS 8.0 V = 5.0V DS 6 T = 125C J 6.0 4 4.0 2 T = 25C 2.0 J 0 0.0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 0 5 10 15 20 25 30 Q Total Gate Charge (nC) G V Gate -to -Source Voltage (V) GS, Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage T measured with thermocouple mounted to top (Drain) of part. Click on this section to link to the appropriate technical paper. C Repetitive rating pulse width limited by max. junction temperature. Click on this section to link to the DirectFET Website. Starting T = 25C, L = 0.28mH, R = 50 , I = 15A. Surface mounted on 1 in. square Cu board, steady state. J G AS www.irf.com 1 01/28/11 Typical R (m ) DS(on) V , Gate-to-Source Voltage (V) GS Static T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units V = 0V, I = 250A BV Drain-to-Source Breakdown Voltage 25 V DSS GS D V / T Reference to 25C, I = 1mA Breakdown Voltage Temp. Coefficient 22 mV/C D DSS J V = 10V, I = 19A R Static Drain-to-Source On-Resistance 2.8 3.7 GS D DS(on) m V = 4.5V, I = 15A 4.1 5.4 GS D V Gate Threshold Voltage 1.1 1.6 2.1 V V = V , I = 35A GS(th) DS GS D V = V , I = 25A V / T Gate Threshold Voltage Coefficient -6.2 mV/C DS GS D GS(th) J V = 20V, V = 0V I Drain-to-Source Leakage Current 1.0 A DS GS DSS V = 20V, V = 0V, T = 125C 150 DS GS J V = 16V I Gate-to-Source Forward Leakage 100 nA GS GSS V = -16V Gate-to-Source Reverse Leakage -100 GS V = 13V, I = 15A gfs Forward Transconductance 180 S DS D Q Total Gate Charge 11 17 g Q V = 13V Pre-Vth Gate-to-Source Charge 2.2 DS gs1 V = 4.5V Q Post-Vth Gate-to-Source Charge 1.4 gs2 GS nC Q I = 15A Gate-to-Drain Charge 4.2 gd D Q Gate Charge Overdrive 3.2 See Fig. 2 & 15 godr Q Switch Charge (Q + Q ) 5.6 sw gs2 gd V = 16V, V = 0V Q Output Charge 11 nC DS GS oss R Gate Resistance 0.4 G V = 13V, V = 4.5V t Turn-On Delay Time 8.7 DD GS d(on) I = 15A t Rise Time 19 r D ns t Turn-Off Delay Time 11 R = 1.5 d(off) G t Fall Time 5.5 See Fig. 17 f C V = 0V Input Capacitance 1590 iss GS V = 13V C Output Capacitance 460 pF oss DS C = 1.0MHz Reverse Transfer Capacitance 110 rss Diode Characteristics Conditions Parameter Min. Typ. Max. Units I Continuous Source Current MOSFET symbol S 40 (Body Diode) showing the A I integral reverse Pulsed Source Current SM 150 p-n junction diode. (Body Diode) T = 25C, I = 15A, V = 0V V Diode Forward Voltage 1.0 V SD J S GS t T = 25C, I = 15A Reverse Recovery Time 18 27 ns J F rr Q Reverse Recovery Charge 23 35 nC di/dt = 300A/s rr Repetitive rating pulse width limited by max. junction temperature. Pulse width 400s duty cycle 2%. 2 www.irf.com