Generation V Technology HEXFET Power MOSFET Ultra Low On-Resistance A A 1 8 N-Channel MOSFET S D V = 30V Surface Mount DSS 2 7 S D Available in Tape & Reel 3 6 S D Dynamic dv/dt Rating 4 5 Fast Switching G D R = 0.030 DS(on) Lead-Free Top View Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically SO-8 reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. Parameter Max. Units V Drain- Source Voltage 30 V DS I T = 25C Continuous Drain Current, V 10V 7.3 D C GS I T = 70C Continuous Drain Current, V 10V 5.8 A D C GS I Pulsed Drain Current 58 DM P T = 25C Power Dissipation 2.5 D C P T = 70C Power Dissipation 1.6 D C Linear Derating Factor 0.02 W/C V Gate-to-Source Voltage 20 V GS V Gate-to-Source Voltage Single Pulse tp<10s 30 V GSM E Single Pulse Avalanche Energy 70 mJ AS dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T T Junction and Storage Temperature Range -55 to + 150 C J, STG Thermal Resistance Parameter Typ. Max. Units R Maximum Junction-to-Ambient 50 C/W JA www.irf.com 1 9/30/04IRF7201PbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.024 V/C Reference to 25C, I = 1mA (BR)DSS J D 0.030 V = 10V, I = 7.3A GS D R Static Drain-to-Source On-Resistance DS(on) 0.050 V = 4.5V, I = 3.7A GS D V Gate Threshold Voltage 1.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 5.8 S V = 15V, I = 2.3A fs DS D 1.0 V = 24V, V = 0V DS GS I Drain-to-Source Leakage Current DSS 25 V = 24V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage -100 V = -20V GS I GSS Gate-to-Source Reverse Leakage 100 V = 20V GS Q Total Gate Charge 19 28 I = 4.6A g D Q Gate-to-Source Charge 2.3 3.5 nC V = 24V gs DS Q Gate-to-Drain Mille) Charge 6.3 9.5 V = 10V, See Fig. 10 gd GS t Turn-On Delay Time 7.0 V = 15V d(on) DD t Rise Time 35 I = 4.6A r D t Turn-Off Delay Time 21 R = 6.2 d(off) G t Fall Time 19 R = 3.2, f D C Input Capacitance 550 V = 0V iss GS C Output Capacitance 260 pF V = 25V oss DS C Reverse Transfer Capacitance 100 = 1.0MHz, See Fig. 9 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 2.5 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 58 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.2 V T = 25C, I = 4.6A, V = 0V SD J S GS t Reverse Recovery Time 48 73 ns T = 25C, I = 4.6A rr J F Q Reverse RecoveryCharge 73 110 nC di/dt = 100A/s rr Repetitive rating pulse width limited by I 4.6A, di/dt 120A/s, V V , SD DD (BR)DSS max. junction temperature. (See fig. 11) T 150C J V = 15V, starting T = 25C, L = 6.6mH Pulse width 300s duty cycle 2% DD J R = 25, I = 4.6A. (See Figure 8) G AS When mounted on 1 inch square copper board, t<10 sec 2 www.irf.com