PD - 91879A
IRF7207
HEXFET Power MOSFET
Generation 5 Technology
A
1 8
S D
P-Channel Mosfet
2 7 V = -20V
DSS
Surface Mount
S D
Available in Tape & Reel
3
6
S D
Dynamic dv/dt Rating
4 5
G D
Fast Switching
R = 0.06
DS(on)
Top View
Description
Fifth Generation HEXFET Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
SO-8
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in a
typical PCB mount application.
Absolute Maximum Ratings
Parameter Max. Units
V Drain- Source Voltage -20 V
DS
I @ T = 25C Continuous Drain Current, V @ -4.5V -5.4
D C GS
I @ T = 70C Continuous Drain Current, V @ -4.5V -4.3 A
D C GS
I Pulsed Drain Current -43
DM
P @T = 25C Power Dissipation 2.5
D C
W
P @T = 70C Power Dissipation 1.6
D C
Linear Derating Factor 0.02 W/C
V Gate-to-Source Voltage 12 V
GS
V Gate-to-Source Voltage Single Pulse tp<10s -16 V
GSM
E Single Pulse Avalanche Energy 140
AS
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T T Junction and Storage Temperature Range -55 to + 150 C
J, STG
Thermal Resistance
Parameter Typ. Max. Units
R Maximum Junction-to-Ambient 50 C/W
JA
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Electrical Characteristics @ T = 25C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V Drain-to-Source Breakdown Voltage -20 VV = 0V, I = -250A
(BR)DSS GS D
V / T Breakdown Voltage Temp. Coefficient -0.011 V/C Reference to 25C, I = -1mA
(BR)DSS J D
0.06 V = -4.5V, I = -5.4A
GS D
R Static Drain-to-Source On-Resistance
DS(on)
0.10 V = -2.7V, I = -2.7A
GS D
V Gate Threshold Voltage -0.7 VV = V , I = -250A
GS(th) DS GS D
g Forward Transconductance 8.3 SV = -10V, I = -5.4A
fs DS D
-1.0 V = -16V, V = 0V
DS GS
I Drain-to-Source Leakage Current
DSS A
-25 V = -16V, V = 0V, T = 125C
DS GS J
Gate-to-Source Forward Leakage -100 V = 12V
GS
I
nA
GSS
Gate-to-Source Reverse Leakage 100 V = -12V
GS
Q Total Gate Charge 15 22 I = -5.4A
g D
Q Gate-to-Source Charge 2.2 3.3 nC V = -10V
gs DS
Q Gate-to-Drain Mille) Charge 5.7 8.6 V = -4.5V,
gd GS
t Turn-On Delay Time 11 V = -10V
d(on) DD
t Rise Time 24 I = -1.0A
r D
ns
t Turn-Off Delay Time 43 R = 6.0
d(off) G
t Fall Time 41 R = 10 ,
f D
C Input Capacitance 780 V = 0V
iss GS
C Output Capacitance 410 pF V = -15V
oss DS
C Reverse Transfer Capacitance 200 = 1.0MHz,
rss
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
D
I Continuous Source Current MOSFET symbol
S
-3.1
(Body Diode) showing the
A
G
I Pulsed Source Current integral reverse
SM
-43
(Body Diode) p-n junction diode.
S
V Diode Forward Voltage -1.0 V T = 25C, I = -3.1A, V = 0V
SD J S GS
t Reverse Recovery Time 42 63 ns T = 25C, I = -3.1A
rr J F
Q Reverse RecoveryCharge 50 75 nC di/dt = -100A/s
rr
Notes:
Repetitive rating; pulse width limited by
I -5.4A, di/dt -79A/s, V V ,
SD DD (BR)DSS
max. junction temperature.
T 150C
J
Starting T = 25C, L = 9.6mH Pulse width 300s; duty cycle 2%.
J
R = 25 , I = -5.4A.
G AS
When mounted on 1 inch square copper board, t<10 sec
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