IRF7210PbF HEXFET Power MOSFET Ultra Low On-Resistance A 1 8 S D P-Channel MOSFET V = -12V 2 7 DSS Surface Mount S D Available in Tape & Reel 3 6 S D Lead-Free 4 5 G D R = 0.007 DS(on) Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Parameter Max. Units V Drain- Source Voltage -12 V DS I T = 25C Continuous Drain Current, V -4.5V 16 D A GS I T = 70C Continuous Drain Current, V -4.5V 12 A D A GS I Pulsed Drain Current 100 DM P T = 25C Power Dissipation 2.5 D A P T = 70C Power Dissipation 1.6 D A Linear Derating Factor 0.02 W/C V Gate-to-Source Voltage 12 V GS V Gate-to-Source Voltage Single Pulse tp<10s 16 V GSM T T Junction and Storage Temperature Range -55 to + 150 C J, STG Thermal Resistance Parameter Max. Units R Maximum Junction-to-Ambient 50 C/W JA www.irf.com 1 08/19/05IRF7210PbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -14 V V = 0V, I = -5.0mA (BR)DSS GS D V Drain-to-Source Breakdown Voltage -12 V V = 0V, I = -250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.011 V/C Reference to 25C, I = -1mA (BR)DSS J D .005 .007 V = -4.5V, I = -16A GS D R Static Drain-to-Source On-Resistance DS(on) .007 .010 V = -2.5V, I = -12A GS D V Gate Threshold Voltage -0.6 V V = V , I = -500A GS(th) DS GS D g Forward Transconductance 16 S V = -10V, I = -16A fs DS D -10 V = -12V, V = 0V DS GS I Drain-to-Source Leakage Current -1.0 V = -9.6V, V = 0V A DSS DS GS -100 V = -12V, V = 0V, T = 70C DS GS J Gate-to-Source Forward Leakage -100 V = -12V GS nA Gate-to-Source Reverse Leakage 100 V = 12V GS Q Total Gate Charge 212 I = -10A g D Q Gate-to-Source Charge 27 nC V = -10V gs DS Q Gate-to-Drain Mille) Charge 52 V = -5.0V gd GS t Turn-On Delay Time 50 ns V = -10V d(on) DD t Rise Time 3.0 I = -10A r D t Turn-Off Delay Time 6.5 s R = 1.0 d(off) D t Fall Time 30 R = 6.2 f G C Input Capacitance 17179 V = 0V iss GS C Output Capacitance 9455 pF V = -10V oss DS C Reverse Transfer Capacitance 8986 = 1.0kHz rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S -2.5 (Body Diode) showing the G I Pulsed Source Current integral reverse SM -100 (Body Diode) p-n junction diode. S V Diode Forward Voltage -1.2 V T = 25C, I = -2.5A, V = 0V SD J S GS t Reverse Recovery Time 165 247 ns T = 25C, I = -2.5A rr J F Q Reverse RecoveryCharge 296 444 nC di/dt = 85A/s rr Repetitive rating pulse width limited by When mounted on 1 inch square copper board, t<10 sec max. junction temperature. Pulse width 300s duty cycle 2 www.irf.com