IRF7233PbF HEXFET Power MOSFET Ultra Low On-Resistance A 1 8 S D P-Channel MOSFET V = -12V 2 7 DSS Surface Mount S D Available in Tape & Reel 3 6 S D Lead-Free 4 5 G D R = 0.020 DS(on) Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced SO-8 board space. The package is designed for vapor phase, infrared, or wave soldering techniques. Parameter Max. Units V Drain- Source Voltage -12 V DS I T = 25C Continuous Drain Current, V -4.5V 9.5 D A GS I T = 70C Continuous Drain Current, V -4.5V 6.0 A D A GS I Pulsed Drain Current 76 DM P T = 25C Power Dissipation 2.5 D A P T = 70C Power Dissipation 1.6 D A Linear Derating Factor 0.02 W/C E Single Pulse Avalanche Energy 60 mJ AS V Gate-to-Source Voltage 12 V GS T T Junction and Storage Temperature Range -55 to + 150 C J, STG Thermal Resistance Parameter Max. Units R Maximum Junction-to-Ambient 50 C/W JA www.irf.com 1 11/9/04 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -14 V V = 0V, I = -5.0mA (BR)DSS GS D V Drain-to-Source Breakdown Voltage -12 V V = 0V, I = -250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.001 V/C Reference to 25C, I = -1mA (BR)DSS J D 0.013 0.020 V = -4.5V, I = -9.5A GS D R Static Drain-to-Source On-Resistance DS(on) 0.023 0.033 V = -2.5V, I = -6.0A GS D V Gate Threshold Voltage -0.6 V V = V , I = -250A GS(th) DS GS D g Forward Transconductance 3.3 S V = -10V, I = -9.5A fs DS D -10 V = -12V, V = 0V DS GS I Drain-to-Source Leakage Current -1.0 A V = -9.6V, V = 0V DSS DS GS -100 V = -12V, V = 0V, T = 70C DS GS J Gate-to-Source Forward Leakage -100 V = -12V GS nA Gate-to-Source Reverse Leakage 100 V = 12V GS Q Total Gate Charge 49 74 I = -9.5A g D Q Gate-to-Source Charge 9.3 14 nC V = -10V gs DS Q Gate-to-Drain Mille) Charge 22 32 V = -5.0V gd GS t Turn-On Delay Time 26 V = -10V d(on) DD t Rise Time 540 I = -9.5A r D t Turn-Off Delay Time 77 ns R = 1.0 d(off) D t Fall Time 370 R = 6.2 f G C Input Capacitance 4530 6000 V = 0V iss GS C Output Capacitance 2400 pF V = -10V oss DS C Reverse Transfer Capacitance 2220 = 1.0kHz rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S -2.5 (Body Diode) showing the G I Pulsed Source Current integral reverse SM -76 (Body Diode) p-n junction diode. S V Diode Forward Voltage -1.2 V T = 25C, I = -2.5A, V = 0V SD J S GS t Reverse Recovery Time 43 65 ns T = 25C, I = -2.5A rr J F Q Reverse RecoveryCharge 35 52 nC di/dt = 100A/s rr Repetitive rating pulse width limited by When mounted on 1 inch square copper board, t<10 sec max. junction temperature. Starting T = 25C, L = 1.3mH J Pulse width 300s duty cycle R = 25, I = 9.5A. G AS 2 www.irf.com