IRF7241PbF HEXFET Power MOSFET Trench Technology V R max (m I DSS DS(on) D Ultra Low On-Resistance -40V 41 V = -10V -6.2A GS P-Channel MOSFET 70 V = -4.5V -5.0A GS Available in Tape & Reel Lead-Free A 1 8 S D Description 2 7 New trench HEXFET Power MOSFETs from S D International Rectifier utilize advanced processing 3 6 S D techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the 4 5 G D ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer SO-8 Top View with an extremely efficient and reliable device for use in battery and load management applications. Parameter Max. Units V Drain- Source Voltage -40 V DS I T = 25C Continuous Drain Current, V -10V -6.2 D A GS I T = 70C Continuous Drain Current, V -10V -4.9 A D A GS I Pulsed Drain Current -25 DM P T = 25C Power Dissipation 2.5 D A P T = 70C Power Dissipation 1.6 D A Linear Derating Factor 20 mW/C V Gate-to-Source Voltage 20 V GS T T Junction and Storage Temperature Range -55 to + 150 C J, STG Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Drain Lead 20 JL R Junction-to-Ambient 50 C/W JA www.irf.com 1 10/6/04 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -40 V V = 0V, I = -250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.03 V/C Reference to 25C, I = -1mA (BR)DSS J D 25 41 V = -10V, I = -6.2A GS D R Static Drain-to-Source On-Resistance DS(on) m 45 70 V = -4.5V, I = -5.0A GS D V Gate Threshold Voltage -1.0 -3.0 V V = V , I = -250A GS(th) DS GS D g Forward Transconductance 8.9 S V = -10V, I = -6.2A fs DS D -10 V = -32V, V = 0V DS GS I Drain-to-Source Leakage Current DSS -25 V = -32V, V = 0V, T = 70C DS GS J Gate-to-Source Forward Leakage -100 V = -20V GS Gate-to-Source Reverse Leakage 100 V = 20V GS Q Total Gate Charge 53 80 I = -6.2A g D Q Gate-to-Source Charge 14 21 nC V = -32V gs DS Q Gate-to-Drain Mille) Charge 3.9 5.9 V = -10V gd GS t Turn-On Delay Time 24 V = -20V d(on) DD t Rise Time 280 I = -1.0A r D t Turn-Off Delay Time 210 R = 6.0 d(off) G t Fall Time 100 V = -10V f GS C Input Capacitance 3220 V = 0V iss GS C Output Capacitance 160 pF V = -25V oss DS C Reverse Transfer Capacitance 190 = 1.0kHz rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 2.5 (Body Diode) showing the I Pulsed Source Current integral reverse G SM 25 (Body Diode) p-n junction diode. S V Diode Forward Voltage -1.2 V T = 25C, I = -2.5A, V = 0V SD J S GS t Reverse Recovery Time 32 48 ns T = 25C, I = -2.5A rr J F Q Reverse Recovery Charge 45 68 nC di/dt = -100A/s rr Repetitive rating pulse width limited by Surface mounted on 1 in square Cu board max. junction temperature. Pulse width 400s duty cycle 2 www.irf.com