The Infineon IRF730PBF is an enhancement type P-channel MOSFET with trench gate structure, manufactured in a TO-220-3 RoHS compliant package. The device is rated for 400V maximum drain-source voltage (VDS), 5.5A maximum continuous drain current (ID), 4V threshold voltage (VGS), and 250uA maximum gate leakage current (IG). It has a low on-resistance of 1O at 3.3A drain current and 10V gate voltage, allowing for a low power loss and high transfer rate. The IRF730PBF is well-suited for a variety of applications, including load switching, power supply control, and general amplifier applications.