PD - 95196A IRF7328PbF HEXFET Power MOSFET Trench Technology V R max I DSS DS(on) D Ultra Low On-Resistance -30V 21m V = -10V -8.0A GS Dual P-Channel MOSFET 32m V = -4.5V -6.8A GS Available in Tape & Reel Lead-Free Description 1 8 New trench HEXFET Power MOSFETs from S1 D1 International Rectifier utilize advanced processing 2 7 G1 D1 techniques to achieve extremely low on-resistance 3 6 per silicon area. This benefit, combined with the S2 D2 ruggedized device design that HEXFET power 4 5 G2 D2 MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use SO-8 in battery and load management applications. Top View Absolute Maximum Ratings Parameter Max. Units V Drain-Source Voltage -30 V DS I T = 25C Continuous Drain Current, V -10V -8.0 D A GS I T = 70C Continuous Drain Current, V -10V -6.4 A D A GS I Pulsed Drain Current -32 DM P T = 25C Maximum Power Dissipation 2.0 W D A P T = 70C Maximum Power Dissipation 1.3 W D A Linear Derating Factor 16 mW/C V Gate-to-Source Voltage 20 V GS T , T Junction and Storage Temperature Range -55 to + 150 C J STG Thermal Resistance Parameter Max. Units R Maximum Junction-to-Ambient 62.5 C/W JA www.irf.com 1 12/03/10 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -30 V V = 0V, I = -250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient -0.018 V/C Reference to 25C, I = -1mA (BR)DSS J D 17 21 V = -10V, I = -8.0A GS D R Static Drain-to-Source On-Resistance DS(on) m 26.8 32 V = -4.5V, I = -6.8A GS D V Gate Threshold Voltage -1.0 -2.5 V V = V , I = -250A GS(th) DS GS D g Forward Transconductance 12 S V = -10V, I = -8.0A fs DS D -15 V = -24V, V = 0V DS GS I Drain-to-Source Leakage Current DSS -25 V = -24V, V = 0V, T = 70C DS GS J Gate-to-Source Forward Leakage -100 V = -20V GS I GSS Gate-to-Source Reverse Leakage 100 V = 20V GS Q Total Gate Charge 52 78 I = -8.0A g D Q Gate-to-Source Charge 9.8 nC V = -15V gs DS Q Gate-to-Drain Mille) Charge 8.3 V = -10V gd GS t Turn-On Delay Time 13 20 V = -15V, V = -10.0V d(on) DD GS t Rise Time 15 23 I = -1.0A r D t Turn-Off Delay Time 198 297 R = 6.0 d(off) G t Fall Time 98 147 R = 15 f D C Input Capacitance 2675 V = 0V iss GS C Output Capacitance 409 pF V = -25V oss DS C Reverse Transfer Capacitance 262 = 1.0MHz rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 2.0 (Body Diode) showing the G I Pulsed Source Current integral reverse SM -32 (Body Diode) p-n junction diode. S V Diode Forward Voltage -1.2 V T = 25C, I = -2.0A, V = 0V SD J S GS t Reverse Recovery Time 37 56 ns T = 25C, I = -2.0A rr J F Q Reverse Recovery Charge 36 54 nC di/dt = -100A/s rr Repetitive rating pulse width limited by Surface mounted on FR-4 board, 10sec max. junction temperature. Pulse width 400s duty cycle 2 www.irf.com