IRF7329PbF HEXFET Power MOSFET Trench Technology V R max (m I DSS DS(on) D Ultra Low On-Resistance 17 V = -4.5V 9.2A GS Dual P-Channel MOSFET -12V 21 V = -2.5V 7.4A GS Low Profile (<1.8mm) 30 V = -1.8V 4.6A GS Available in Tape & Reel Lead-Free Description New P-Channel HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per 1 8 S1 D1 silicon area. This benefit, combined with the ruggedized 2 7 device design that HEXFET Power MOSFETs are well G1 D1 known for, provides the designer with an extremely efficient 3 6 and reliable device for use in a wide variety of applications. S2 D2 4 5 G2 D2 The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and SO-8 multiple-die capability making it ideal in a variety of Top View power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering technique Parameter Max. Units V Drain- Source Voltage -12 V DS I T = 25C Continuous Drain Current, V -4.5V -9.2 D A GS I T = 70C Continuous Drain Current, V -4.5V -7.4 A D A GS I Pulsed Drain Current -37 DM P T = 25C Power Dissipation 2.0 D A P T = 70C Power Dissipation 1.3 D A Linear Derating Factor 16 mW/C V Gate-to-Source Voltage 8.0 V GS T T Junction and Storage Temperature Range -55 to + 150 C J, STG Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Drain Lead 20 JL R Junction-to-Ambient 62.5 C/W JA www.irf.com 1 10/7/04 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -12 V V = 0V, I = -250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.007 V/C Reference to 25C, I = -1mA (BR)DSS J D 17 V = -4.5V, I = -9.2A GS D R Static Drain-to-Source On-Resistance DS(on) 21 m V = -2.5V, I = -7.4A GS D 30 V = -1.8V, I = -4.6A GS D V Gate Threshold Voltage -0.40 -0.90 V V = V , I = -250A GS(th) DS GS D g Forward Transconductance 25 S V = -10V, I = -9.2A fs DS D -1.0 V = -9.6V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS -25 V = -9.6V, V = 0V, T = 70C DS GS J Gate-to-Source Forward Leakage -100 V = -8.0V GS nA I GSS Gate-to-Source Reverse Leakage 100 V = 8.0V GS Q Total Gate Charge 38 57 I = -9.2A g D Q Gate-to-Source Charge 6.8 10 nC V = -6.0V gs DS Q Gate-to-Drain Mille) Charge 8.1 12 V = -4.5V gd GS t Turn-On Delay Time 10 V = -6.0V d(on) DD ns t Rise Time 8.6 I = -1.0A r D t Turn-Off Delay Time 340 R = 6.0 d(off) D t Fall Time 260 V = -4.5V f GS C Input Capacitance 3450 V = 0V iss GS C Output Capacitance 1000 pF V = -10V oss DS C Reverse Transfer Capacitance 640 = 1.0MHz rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S -2.0 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM -37 (Body Diode) p-n junction diode. S V Diode Forward Voltage -1.2 V T = 25C, I = -2.0A, V = 0V SD J S GS t Reverse Recovery Time 50 75 ns T = 25C, I = -2.0A rr J F Q Reverse Recovery Charge 48 72 nC di/dt = -100A/s rr Repetitive rating pulse width limited by When mounted on 1 inch square copper board. max. junction temperature. Pulse width 400s duty cycle 2 www.irf.com