HEXFET Power MOSFET V R max I Applications DSS DS(on) D High frequency DC-DC converters 73m V = 10V 80V 3.6A GS Lead-Free Benefits 1 8 S1 D1 Low Gate to Drain Charge to Reduce 2 7 G1 D1 Switching Losses 3 6 Fully Characterized Capacitance Including S2 D2 Effective C to Simplify Design, (See 4 5 OSS G2 D2 App. Note AN1001) Fully Characterized Avalanche Voltage Top View SO-8 and Current Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 80 V DS V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V I T = 25C 3.6 GS D A Continuous Drain Current, V 10V I T = 100C 2.9 A GS D A Pulsed Drain Current I 29 DM P T = 25C Maximum Power Dissipation 2.0 W D A Linear Derating Factor 0.02 W/C dv/dt Peak Diode Recovery dv/dt 2.3 V/ns T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units R Junction-to-Drain Lead 42 C/W JL R Junction-to-Ambient (PCB Mount) 62.5 JA Notes through are on page 8 IRF7380PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 80 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.09 V/C Reference to 25C, I = 1mA (BR)DSS J D m R Static Drain-to-Source On-Resistance 61 73 V = 10V, I = 2.2A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D I Drain-to-Source Leakage Current 20 A V = 80V, V = 0V DSS DS GS 250 V = 64V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 200 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 4.3 S V = 25V, I = 2.2A DS D Q Total Gate Charge 15 23 I = 2.2A g D Q Gate-to-Source Charge 2.9 nC V = 40V gs DS Q Gate-to-Drain Mille) Charge 4.5 V = 10V gd GS t Turn-On Delay Time 9.0 V = 40V d(on) DD t Rise Time 10 I = 2.2A r D t Turn-Off Delay Time 41 ns R = 24 d(off) G t Fall Time 17 V = 10V f GS C Input Capacitance 660 V = 0V iss GS C Output Capacitance 110 V = 25V oss DS C Reverse Transfer Capacitance 15 pF = 1.0MHz rss C Output Capacitance 710 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 72 V = 0V, V = 64V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 140 V = 0V, V = 0V to 64V oss GS DS Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 75 mJ AS Avalanche Current I 2.2 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current 3.6 A MOSFET symbol S (Body Diode) showing the G I Pulsed Source Current 29 A integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 2.2A, V = 0V SD J S GS t Reverse Recovery Time 50 ns T = 25C, I = 2.2A, V = 40V DD rr J F di/dt = 100A/s Q Reverse Recovery Charge 110 nC rr