X-On Electronics has gained recognition as a prominent supplier of IRF7401TRPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF7401TRPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF7401TRPBF Infineon

Name: IRF7401TRPBF
Brand: Infineon
SKU: IRF7401TRPBF_Infineon
Availability: InStock
Rating: 5 (11 reviews)

IRF7401TRPBF electronic component of Infineon

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See Product Specifications

Part No.	IRF7401TRPBF
Manufacturer:	Infineon
Category:	MOSFETs
Description:	MOSFET N Trench 20V 8.7A 700mV @ 250uA 22 mÎ© @ 4.1A,4.5V SOIC-8_150mil RoHS
Datasheet:	IRF7401TRPBF Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

IRF7401TRPBF More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
1 MOQ : 1 Multiples : 1	1 : USD 0.6565 10 : USD 0.5458 30 : USD 0.4906 100 : USD 0.4351 500 : USD 0.3569 1000 : USD 0.3398		N/A Obsolete

We are delighted to provide the IRF7401TRPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF7401TRPBF and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The Infineon IRF7401TRPBF is a MOSFET N Trench 20V 8.7A 700mV @ 250uA 22 mO @ 4.1A,4.5V SOIC-8_150mil RoHS Power Transistor in a surface mount package. This transistor features high-speed switching with low on resistance and low input capacitance and is designed for power switching applications. It is available in an 8-pin SOIC-150mil package with RoHS compliant lead finish. The device has a gate capacity of 250uA over its 4.5V to 20V Gate voltage range with a drain-source breakdown voltage of 200V and drain current of 8.7A max. Its maximum RDSon is about 22mO at 4.1A and 0.7vgm. The maximum power dissipation of the device is 230mW at TA=25°C. It operates over a wide temperature range of -55°C to 175°C. The IRF7401TRPBF is RoHS compliant and can be used in commercial, industrial and consumer product applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

CYP may also be referenced as

Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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Manufacturer Infineon Infineon
Product Category MOSFETs MOSFETs
RoHS - XON Y Y
Id - Continuous Drain Current 8.7 A 8.7 A
Vds - Drain-Source Breakdown Voltage 20 V 20 V
Rds On - Drain-Source Resistance 22 mOhms 22 mOhms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 700 mV 700 mV
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 2.5 W 2.5 W
Mounting Style Smd/Smt Smd/Smt
Package / Case SOIC - 8 SOIC - 8
Packaging Reel Reel
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 12 V 12 V
Qg - Gate Charge 48 nC 48 nC
Brand Infineon Infineon
Continuous Drain Current 8.7 A 8.7 A
Drain-Source Breakdown Voltage 20 V 20 V
Gate-Source Breakdown Voltage 12 V 12 V
Power Dissipation 2.5 W 2.5 W
Rds On 22 Mohms 22 Mohms
Gate Charge Qg 32 nC 32 nC
Factory Pack Quantity : 4000 4000
Configuration Single Single
Height 1.75 mm 1.75 mm
Length 4.9 mm 4.9 mm
Transistor Type 1 N - Channel 1 N - Channel
Width 3.9 mm 3.9 mm
Forward Transconductance - Min 11 S 11 S
Cnhts 8541290000 8541290000
Fall Time 92 ns 92 ns
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Product Type Mosfet Mosfet
Rise Time 72 ns 72 ns
Subcategory Mosfets Mosfets
Taric 8541290000 8541290000