A A 1 8 S D 2 7 S D % & ( )( 3 6 S D * 4 5 100% R Tested G D G ( * Top View * +,-*, . / ( ( % 0 1 % 2 3 ( % ( ( ( / ( ( ( +,-*, 4 *, 5 3 % ( ( 1 ( ( ( %% 2 6 ( ( / ( SO-8 ( ( ( % ( % 5 ( % %% 2 7 % 3 % ( ( %% ( ( ( ( % 2 % 5 ( ( % % 3 (3 ( 0 2 4 ( % 8267 % % 4 9 %% 2 Absolute Maximum Ratings Symbol Parameter Max Units V DS Drain-to-Source Voltage 30 V V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V I T = 25C 13 A GS D Continuous Drain Current, V 10V I T = 70C GS 9.2 D A A Pulsed Drain Current I 58 DM P T = 25C Power Dissipation 2.5 A D W mW/C Linear Derating Factor 0.02 Single Pulse Avalanche Energency E 260 AS mJ V/ns dv/dt Peak Diode Recovery dv/dt 5.0 C T T Junction and Storage Temperature Range -55 to +150 J, STG Thermal Resistance Ratings Symbol Parameter TypMax Units R Junction-to-Drain Lead 20 JL C/W Junction-to-Ambient R JA 50 www.irf.com 1 Electrical Characteristics TJ = 25C (unless otherwise specified) Symbol Parameter Min Typ Max Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A GS D V /T (BR)DSS J Breakdown Voltage Temp. Coefficient 0.034 V/C Reference to 25C, I = 1mA D = 10V, I = 7.3A 0.011 V GS D R Static Drain-to-Source On-Resistance DS(on) 0.018 V = 4.5V, I = 3.7A GS D V Gate Threshold Voltage 1.0 3.0 V V = V , I = 250A GS(th) DS GS D g fs Forward Transconductance 10 S V = 10V, I = 3.7A DS D 12 V = 30V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 25 V = 24V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage -100 V = -20V GS I nA GSS Gate-to-Source Reverse Leakage 100 V = 20V GS Q Total Gate Charge 52 79 I = 7.3A g D Q Gate-to-Source Charge 6.1 9.2 nC V = 24V gs DS Q gd Gate-to-Drain Mille) Charge 16 23 V = 10V, See Fig. 6 and 9 GS R G Gate Resistance 3.7 t Turn-On Delay Time 8.6 V = 15V d(on) DD t r Rise Time 50 I = 7.3A D t Turn-Off Delay Time 52 ns R = 6.2 d(off) G t f Fall Time 46 R = 2.0, See Fig. 10 G C Input Capacitance 1800 V = 0V iss GS C oss Output Capacitance 680 V = 25V pF DS C Reverse Transfer Capacitance 240 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 3.1 S (Body Diode) A showing the Pulsed Source Current integral reverse I 58 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 7.3A, V = 0V SD J S GS t Reverse Recovery Time 74 110 ns T = 25C, I = 7.3A rr J F di/dt = 100A/s Q Reverse Recovery Charge 200 300 nC rr I %& & ( ) ) SD * + ,- 4 % ( 5 * . +,- / . 0 1 . + 2 . %& 3 3 67 * 0 ,- www.irf.com 2