PD- 95304 IRF7421D1PbF FETKY MOSFET / Schottky Diode Co-packaged HEXFET Power A A 1 8 A D MOSFET and Schottky Diode V = 30V DSS Ideal For Synchronous Regulator 2 7 S D Applications 3 6 S D R = 0.035 DS(on) Generation V Technology 4 5 G D SO-8 Footprint Schottky Vf = 0.39V Lead-Free Top View Description TM The FETKY family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced SO-8 thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. Absolute Maximum Ratings (T = 25C unless otherwise noted) A Parameter Maximum Units I T = 25C Continuous Drain Current, V 10V 5.8 A D A GS I T = 70C 4.6 D A I Pulsed Drain Current 46 DM P T = 25C Power Dissipation 2.0 W D A P T = 70C 1.3 D A Linear Derating Factor 16 W/C V Gate-to-Source Voltage 20 V GS dv/dt Peak Diode Recovery dv/dt -5.0 V/ns T T Junction and Storage Temperature Range -55 to +150 C J, STG Thermal Resistance Ratings Parameter Maximum Units R Junction-to-Ambient 62.5 C/W JA Notes: Repetitive rating pulse width limited by maximum junction temperature (see figure 11) I 4.1A, di/dt 110A/s, V V , T 150C SD DD (BR)DSS J Pulse width 300s duty cycle 2% Surface mounted on FR-4 board, t 10sec www.irf.com 1 10/13/04 IRF7421D1PbF MOSFET Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A (BR)DSS GS D R Static Drain-to-Source On-Resistance 0.026 0.035 V = 10V, I = 4.1A GS D DS(on) 0.040 0.060 V = 4.5V, I = 2.1A GS D V Gate Threshold Voltage 1.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 4.6 S V = 15V, I = 2.1A fs DS D I Drain-to-Source Leakage Current 1.0 V = 24V, V = 0V DS GS DSS A 25 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage -100 V = -20V GSS GS nA Gate-to-Source Reverse Leakage 100 V = 20V GS Q Total Gate Charge 18 27 I = 4.1A g D Q Gate-to-Source Charge 2.2 3.3 nC V = 24V gs DS Q Gate-to-Drain Mille) Charge 5.9 8.9 V = 10V (see figure 10) gd GS t Turn-On Delay Time 6.7 V = 15V d(on) DD t Rise Time 27 I = 4.1A r D ns t Turn-Off Delay Time 20 R = 6.2 d(off) G t Fall Time 16 R = 3.7 f D C Input Capacitance 510 V = 0V iss GS C Output Capacitance 200 pF V = 25V oss DS C Reverse Transfer Capacitance 84 = 1.0MHz (see figure 9) rss MOSFET Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current (Body Diode) 3.1 A S I Pulsed Source Current (Body Diode) 33 SM V Body Diode Forward Voltage 1.0 V T = 25C, I = 4.1A, V = 0V SD J S GS t Reverse Recovery Time (Body Diode) 57 86 ns T = 25C, I = 4.1A rr J F Q Reverse Recovery Charge 93 140 nC di/dt = 100A/s rr % & ( ( )* *( +)* * ( , -* *( .-* * ( ( / ( 0 1 ( 1 1 +2 * 3 % . 1 + 1 - . 4 ( ( 1 1 5 %67 678 9 1 : 0 +. 19 )* 1 2 www.irf.com