HEXFET Power MOSFET V -20 V DS A 1 8 R S D DS(on) max 8.2 ( V = -4.5V) 2 7 GS D S m R DS(on) max 3 13 6 S D ( V = -2.5V) GS 4 5 Q 87 nC G D g (typical) I D -15 A SO-8 Top View ( T = 25C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1,Consumer qualification Increased Reliability Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity Tube/Bulk 95 IRF7425PbF IRF7425PbF SO-8 Tape and Reel 4000 IRF7425TRPbF Parameter Max. Units V Drain- Source Voltage -20 V DS I T = 25C Continuous Drain Current, V -4.5V -15 D A GS I T = 70C Continuous Drain Current, V -4.5V -12 A D A GS I Pulsed Drain Current -60 DM P T = 25C Power Dissipation 2.5 D A P T = 70C Power Dissipation 1.6 D A Linear Derating Factor 20 mW/C V Gate-to-Source Voltage 12 V GS T T Junction and Storage Temperature Range -55 to + 150 C J, STG Thermal Resistance Parameter Max. Units R Maximum Junction-to-Ambient 50 C/W JA Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -20 V V = 0V, I = -250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.010 V/C Reference to 25C, I = -1mA (BR)DSS J D 8.2 V = -4.5V, I = -15A GS D R Static Drain-to-Source On-Resistance DS(on) m 13 V = -2.5V, I = -13A GS D V Gate Threshold Voltage -0.45 -1.2 V V = V , I = -250 A GS(th) DS GS D g Forward Transconductance 44 S V = -10V, I = -15A fs DS D -1.0 V = -16V, V = 0V DS GS I Drain-to-Source Leakage Current DSS -25 V = -16V, V = 0V, T = 70C DS GS J Gate-to-Source Forward Leakage -100 V = -12V GS Gate-to-Source Reverse Leakage 100 V = 12V GS Q Total Gate Charge 87 130 I = -15A g D Q Gate-to-Source Charge 18 27 nC V = -10V gs DS Q Gate-to-Drain Mille) Charge 21 32 V = -4.5V gd GS t Turn-On Delay Time 13 V = -10V d(on) DD t Rise Time 20 I = -1.0A r D t Turn-Off Delay Time 230 R = 6.0 d(off) G t Fall Time 160 V = -4.5V f GS C Input Capacitance 7980 V = 0V iss GS C Output Capacitance 1480 pF V = -15V oss DS C Reverse Transfer Capacitance 980 = 1.0kHz rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 2.5 (Body Diode) showing the I Pulsed Source Current integral reverse G SM 60 (Body Diode) p-n junction diode. S V Diode Forward Voltage -1.2 V T = 25C, I = -2.5A, V = 0V SD J S GS t Reverse Recovery Time 120 180 ns T = 25C, I = -2.5A rr J F Q Reverse Recovery Charge 160 240 nC di/dt = -100A/ s rr Repetitive rating pulse width limited by Surface mounted on 1 in square Cu board, t max. junction temperature. Pulse width 400s duty cycle