IRF7458PbF SMPS MOSFET HEXFET Power MOSFET Applications High Frequency Isolated DC-DC V R max I DSS DS(on) D Converters with Synchronous Rectification 30V 8.0m 14A for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power Lead-Free A A 1 8 Benefits S D 2 7 S D Ultra-Low Gate Impedance 3 6 Very Low R S DS(on) D Fully Characterized Avalanche Voltage 4 5 G D and Current SO-8 Top View Absolute Maximum Ratings Symbol Parameter Max. Units V Drain-Source Voltage 30 V DS V Gate-to-Source Voltage 30 V GS I T = 25C Continuous Drain Current, V 10V 14 D A GS I T = 70C Continuous Drain Current, V 10V 11 A D A GS I Pulsed Drain Current 110 DM P T = 25C Maximum Power Dissipation 2.5 W D A P T = 70C Maximum Power Dissipation 1.6 W D A Linear Derating Factor 0.02 mW/C T , T Junction and Storage Temperature Range -55 to + 150 C J STG Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Drain Lead 20 JL R Junction-to-Ambient 50 C/W JA Notes through are on page 8 www.irf.com 1 IRF7458PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.029 V/C Reference to 25C, I = 1mA (BR)DSS J D 6.3 8.0 V = 16V, I = 14A GS D m R Static Drain-to-Source On-Resistance DS(on) 7.0 9.0 V = 10V, I = 11A GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D 20 V = 24V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 100 V = 24V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage 200 V = 24V GS I GSS nA Gate-to-Source Reverse Leakage -200 V = -24V GS Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions g Forward Transconductance 26 S V = 15V, I = 11A fs DS D Q Total Gate Charge 39 59 I = 11A g D Q Gate-to-Source Charge 11 17 nC V = 15V gs DS Q Gate-to-Drain Mille) Charge 8.7 13 V = 10V gd GS Q Output Gate Charge 29 44 V = 0V, V = 16V oss GS DS t Turn-On Delay Time 10 V = 15V d(on) DD t Rise Time 4.6 I = 11A r D ns t Turn-Off Delay Time 22 R = 1.8 d(off) G t Fall Time 5.0 V = 10V f GS C Input Capacitance 2410 V = 0V iss GS C Output Capacitance 1100 V = 15V oss DS C Reverse Transfer Capacitance 110 pF = 1.0MHz rss Avalanche Characteristics Symbol Parameter Typ. Max. Units E Single Pulse Avalanche Energy 280 mJ AS I Avalanche Current 11 A AR Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 2.3 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 110 (Body Diode) p-n junction diode. S 0.82 1.3 V T = 25C, I = 11A, V = 0V J S GS V Diode Forward Voltage SD 0.68 T = 125C, I = 11A, V = 0V J S GS t Reverse Recovery Time 51 77 ns T = 25C, I = 11A, V = 20V rr J F R Q Reverse Recovery Charge 87 130 nC di/dt = 100A/s rr t Reverse Recovery Time 52 78 ns T = 125C, I = 11A, V =20V rr J F R Q Reverse Recovery Charge 93 140 nC di/dt = 100A/s rr 2 www.irf.com