IRF7469PbF SMPS MOSFET HEXFET Power MOSFET Applications V R max(m I DSS DS(on) D High Frequency Isolated DC-DC 40V 17 V = 10V 9.0A GS Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters for A Computer Processor Power A 1 8 S D Lead-Free 2 7 S D 3 6 S D Benefits 4 5 G D Ultra-Low Gate Impedance Very Low R SO-8 DS(on) Top View Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Symbol Parameter Max. Units V Drain-Source Voltage 40 V DS V Gate-to-Source Voltage 20 V GS I T = 25C Continuous Drain Current, V 10V 9.0 D A GS I T = 70C Continuous Drain Current, V 10V 7.3 A D A GS I Pulsed Drain Current 73 DM P T = 25C Maximum Power Dissipation 2.5 W D A P T = 70C Maximum Power Dissipation 1.6 W D A Linear Derating Factor 0.02 mW/C T , T Junction and Storage Temperature Range -55 to + 150 C J STG Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Drain Lead 20 JL R Junction-to-Ambient 50 C/W JA Notes through are on page 8 www.irf.com 1 IRF7469PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.04 V/C Reference to 25C, I = 1mA (BR)DSS J D 12 17 V = 10V, I = 9.0A GS D m R Static Drain-to-Source On-Resistance DS(on) 15.5 21 V = 4.5V, I = 7.2A GS D V Gate Threshold Voltage 1.0 3.0 V V = V , I = 250A GS(th) DS GS D 20 V = 32V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 100 V = 32V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage 200 V = 16V GS I GSS nA Gate-to-Source Reverse Leakage -200 V = -16V GS Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions g Forward Transconductance 17 S V = 20V, I = 7.2A fs DS D Q Total Gate Charge 15 23 I = 7.2A g D Q Gate-to-Source Charge 7.0 11 nC V = 20V gs DS Q Gate-to-Drain Mille) Charge 5.0 8.0 V = 4.5V gd GS Q Output Gate Charge 16 24 V = 0V, V = 16V oss GS DS t Turn-On Delay Time 11 V = 20V d(on) DD t Rise Time 2.2 I = 7.2A r D ns t Turn-Off Delay Time 14 R = 1.8 d(off) G t Fall Time 3.5 V = 4.5V f GS C Input Capacitance 2000 V = 0V iss GS C Output Capacitance 480 V = 20V oss DS C Reverse Transfer Capacitance 28 pF = 1.0MHz rss Avalanche Characteristics Symbol Parameter Typ. Max. Units E Single Pulse Avalanche Energy 210 mJ AS I Avalanche Current 7.2 A AR Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 2.3 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 73 (Body Diode) p-n junction diode. S 0.80 1.3 V T = 25C, I = 7.2A, V = 0V J S GS V Diode Forward Voltage SD 0.65 T = 125C, I = 7.2A, V = 0V J S GS t Reverse Recovery Time 47 71 ns T = 25C, I = 7.2A, V =15V rr J F R Q Reverse Recovery Charge 91 140 nC di/dt = 100A/s rr t Reverse Recovery Time 77 120 ns T = 125C, I = 7.2A, V =20V rr J F R Q Reverse Recovery Charge 150 230 nC di/dt = 100A/s rr 2 www.irf.com