IRF7473PbF HEXFET Power MOSFET Applications Telecom and Data-Com 24 and 48V V R max I input DC-DC converters DSS DS(on) D Motor Control 100V 26m V = 10V 6.9A GS Uninterrutible Power Supply Lead-Free Benefits Ultra Low On-Resistance A A 1 8 High Speed Switching S D Low Gate Drive Current Due to Improved 2 7 S D Gate Charge Characteristic 3 6 S D Improved Avalanche Ruggedness and 4 5 G D Dynamic dv/dt Fully Characterized Avalanche Voltage SO-8 Top View and Current Typical SMPS Topologies Full and Half Bridge 48V input Circuit Forward 24V input Circuit Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 6.9 D A GS I T = 70C Continuous Drain Current, V 10V 5.5 A D A GS I Pulsed Drain Current 55 DM P T = 25C Power Dissipation 2.5 W D A Linear Derating Factor 0.02 W/C V Gate-to-Source Voltage 20 V GS dv/dt Peak Diode Recovery dv/dt 5.8 V/ns T Operating Junction and -55 to + 150 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Drain Lead 20 JL R Junction-to-Ambient 50 C/W JA Notes through are on page 8 www.irf.com 1 8/17/04IRF7473PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.11 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 22 26 m V = 10V, I = 4.1A DS(on) GS D V Gate Threshold Voltage 3.5 5.5 V V = V , I = 250A GS(th) DS GS D 1.0 V = 95V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 80V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions g Forward Transconductance 10 S V = 50V, I = 4.1A fs DS D Q Total Gate Charge 61 I = 4.1A g D Q Gate-to-Source Charge 21 nC V = 50V gs DS Q Gate-to-Drain Mille) Charge 19 V = 10V, gd GS t Turn-On Delay Time 24 V = 50V d(on) DD t Rise Time 20 I = 4.1A r D ns t Turn-Off Delay Time 29 R = 6.0 d(off) G t Fall Time 11 V = 10V f GS C Input Capacitance 3180 V = 0V iss GS C Output Capacitance 230 V = 25V oss DS C Reverse Transfer Capacitance 120 pF = 1.0MHz rss C Output Capacitance 830 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 150 V = 0V, V = 80V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 230 V = 0V, V = 0V to 80V oss GS DS Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 140 mJ AS I Avalanche Current 4.1 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 2.3 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 55 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.3 V T = 25C, I = 4.1A, V = 0V SD J S GS t Reverse Recovery Time 55 ns T = 25C, I = 4.1A rr J F Q Reverse RecoveryCharge 140 nC di/dt = 100A/s rr 2 www.irf.com