IRF7495PbF HEXFET Power MOSFET V R max I Applications DSS DS(on) D High frequency DC-DC converters 22m V = 10V 100V 7.3A GS Lead-Free Benefits A A Low Gate to Drain Charge to Reduce 1 8 S D Switching Losses 2 7 S D Fully Characterized Capacitance Including 3 6 S D Effective C to Simplify Design, (See OSS App. Note AN1001) 4 5 G D Fully Characterized Avalanche Voltage SO-8 and Current Top View Absolute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Voltage 100 V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 7.3 A D A GS I T = 100C 4.6 Continuous Drain Current, V 10V D A GS I Pulsed Drain Current 58 DM P T = 25C 2.5 W D A Maximum Power Dissipation Linear Derating Factor 0.02 W/C dv/dt Peak Diode Recovery dv/dt 7.3 V/ns T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units R JL Junction-to-Drain Lead 20 C/W Junction-to-Ambient (PCB Mount) R 50 JA Notes through are on page 8 www.irf.com 1 9/21/04IRF7495PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A GS D V /T (BR)DSS J Breakdown Voltage Temp. Coefficient 0.10 V/C Reference to 25C, I = 1mA D R DS(on) Static Drain-to-Source On-Resistance 18 22 m V = 10V, I = 4.4A GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D I Drain-to-Source Leakage Current 20 A V = 100V, V = 0V DSS DS GS 250 V = 80V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 200 nA V = 20V GS Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 11 S V = 25V, I = 4.4A DS D Q g Total Gate Charge 34 51 I = 4.4A D Q gs Gate-to-Source Charge 6.3 nC V = 50V DS Q gd Gate-to-Drain Mille) Charge 11.7 V = 10V GS t Turn-On Delay Time 8.7 V = 50V d(on) DD t Rise Time 13 I = 4.4A r D t d(off) Turn-Off Delay Time 10 ns R = 6.2 G t f Fall Time 36 V = 10V GS C iss Input Capacitance 1530 V = 0V GS C oss Output Capacitance 250 V = 25V DS C rss Reverse Transfer Capacitance 110 pF = 1.0MHz C Output Capacitance 980 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C oss Output Capacitance 160 V = 0V, V = 80V, = 1.0MHz GS DS C eff. oss Effective Output Capacitance 240 V = 0V, V = 0V to 80V GS DS Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 180 mJ AS Avalanche Current I 4.4 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current 2.3 MOSFET symbol S (Body Diode) A showing the G I Pulsed Source Current 58 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 4.4A, V = 0V SD J S GS t Reverse Recovery Time 42 ns T = 25C, I = 4.4A, V = 25V rr DD J F Q di/dt = 100A/s Reverse Recovery Charge 73 nC rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com