PD - 95218 IRF7507PbF HEXFET Power MOSFET Generation V Technology N-CHANNEL MOSFET 1 8 S1 D1 Ultra Low On-Resistance N-Ch P-Ch Dual N and P Channel MOSFET 2 7 G1 D1 Very Small SOIC Package 3 6 V 20V -20V DSS S2 D2 Low Profile (<1.1mm) 4 5 Available in Tape & Reel G2 D2 P-CHANNEL MOSFET Fast Switching R 0.135 0.27 DS(on) Top View Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The new Micro8 package, with half the footprint area of the standard SO-8, Micro8 provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. Absolute Maximum Ratings Parameter Max. Units N-Channel P-Channel V Drain-Source Voltage 20 -20 V DS I T = 25C Continuous Drain Current, V 2.4 -1.7 D A GS I T = 70C Continuous Drain Current, V 1.9 -1.4 A D A GS I Pulsed Drain Current 19 -14 DM P T = 25C Maximum Power Dissipation 1.25 W D A P T = 70C Maximum Power Dissipation 0.8 W D A Linear Derating Factor 10 mW/C V Gate-to-Source Voltage 12 V GS V Gate-to-Source Voltage Single Pulse tp<10S 16 V GSM dv/dt Peak Diode Recovery dv/dt 5.0 -5.0 V/ns T , T Junction and Storage Temperature Range -55 to + 150 C J STG Soldering Temperature, for 10 seconds 240 (1.6mm from case) Thermal Resistance Parameter Max. Units R Maximum Junction-to-Ambient 100 C/W JA www.irf.com 1 IRF7507PbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions N-Ch 20 V = 0V, I = 250A GS D P-Ch -20 V = 0V, I = -250A GS D N-Ch 0.041 Reference to 25C, I = 1mA D + P-Ch -0.012 Reference to 25C, I = -1mA D 0.085 0.14 V = 4.5V, I = 1.7A GS D / 0.120 0.20 V = 2.7V, I = 0.85A GS D 0.17 0.27 V = -4.5V, I =-1.2A GS D 0 0.28 0.40 V = -2.7V, I =-0.6A GS D N-Ch 0.7 V = V , I = 250A DS GS D P-Ch -0.7 V = V , I = -250A DS GS D N-Ch 2.6 V = 10V, I = 0.85A DS D P-Ch 1.3 V = -10V, I = -0.6A DS D N-Ch 1.0 V = 16 V, V = 0V DS GS P-Ch -1.0 V = -16V, V = 0V DS GS ,- N-Ch 25 V = 16 V, V = 0V, T = 125C DS GS J P-Ch -25 V = -16V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage N-P 100 V = 12V GSS GS N-Ch 5.3 8.0 N-Channel P-Ch 5.4 8.2 I = 1.7A, V = 16V, V = 4.5V D DS GS N-Ch 0.84 1.3 P-Ch 0.96 1.4 P-Channel N-Ch 2.2 3.3 %& &( I = -1.2A, V = -16V, V = -4.5V D DS GS P-Ch 2.4 3.6 N-Ch 5.7 ) N-Channel P-Ch 9.1 V = 10V, I = 1.7A, R = 6.0, DD D G N-Ch 24 R = 5.7 D P-Ch 35 N-Ch 15 ) P-Channel P-Ch 38 V = -10V, I = -1.2A, R = 6.0. DD D G N-Ch 16 R = 8.3 D P-Ch 43 N-Ch 260 N-Channel P-Ch 240 V = 0V, V = 15V, = 1.0MHz GS DS N-Ch 130 pF P-Ch 130 P-Channel N-Ch 61 V = 0V, V = -15V, = 1.0MHz * GS DS P-Ch 64 Parameter Min. Typ. Max. Units Conditions N-Ch 1.25 % ) ( P-Ch -1.25 - N-Ch 19 0 % ) ( P-Ch -14 N-Ch 1.2 T = 25C, I = 1.7A, V = 0V J S GS P-Ch -1.2 T = 25C, I = -1.2A, V = 0V J S GS N-Ch 39 59 N-Channel * * ) P-Ch 52 78 T = 25C, I = 1.7A, di/dt = 100A/s J F N-Ch 37 56 P-Channel * * ) P-Ch 63 95 T = 25C, I = -1.2A, di/dt = -100A/s J F Notes: Repetitive rating pulse width limited by Pulse width 300s duty cycle 2% max. junction temperature. ( See fig. 21 ) N-Channel I di/dt 66A/s, V V , T 150C Surface mounted on FR-4 board, t 10sec. SD DD (BR)DSS J P-Channel I 1.2A, di/dt 100A/s, V V , 150C SD DD (BR)DSS 2 www.irf.com