IRF7526D1PbF FETKY MOSFET & Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode 1 8 A K P-Channel HEXFET V = -30V DSS 2 7 Low V Schottky Rectifier A K F Generation 5 Technology 3 6 S D R = 0.20 DS(on) Micro8 Footprint 4 5 G D Lead-Free Schottky Vf = 0.39V Top View Description The FETKY family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications like cell phone, PDA, etc. The new Micro8 package, with half the footprint area of the standard SO-8, provides Micro8 the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. Absolute Maximum Ratings Parameter Maximum Units I T = 25C -2.0 D A Continuous Drain Current, V -4.5V GS I T = 70C -1.6 A D A I Pulsed Drain Current -16 DM P T = 25C 1.25 D A W Power Dissipation P T = 70C 0.8 D A Linear Derating Factor 10 mW/C V Gate-to-Source Voltage 20 V GS dv/dt Peak Diode Recovery dv/dt -5.0 V/ns T T Junction and Storage Temperature Range -55 to +150 C J, STG Thermal Resistance Ratings Parameter Maximum Units R Junction-to-Ambient 100 C/W JA Notes: Repetitive rating pulse width limited by max. junction temperature (see Fig. 9) I -1.2A, di/dt 160A/s, V V , T 150C SD DD (BR)DSS J Pulse width 300s duty cycle 2% When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance www.irf.com 1 IRF7526D1PbF MOSFET Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -30 V V = 0V, I = -250A (BR)DSS GS D 0.17 0.20 V = -10V, I = -1.2A GS D 0.30 0.40 V = -4.5V, I = -0.60A GS D V Gate Threshold Voltage -1.0 V V = V , I = -250A GS(th) DS GS D g Forward Transconductance 0.94 S V = -10V, I = -0.60A fs DS D -1.0 V = -24V, V = 0V DS GS A -25 V = -24V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage -100 V = -20V GS nA Gate-to-Source Reverse Leakage 100 V = 20V GS Q Total Gate Charge 7.5 11 I = -1.2A g D Q Gate-to-Source Charge 1.3 1.9 nC V = -24V gs DS Q Gate-to-Drain Mille) Charge 2.5 3.7 V = -10V, See Fig. 6 gd GS t Turn-On Delay Time 9.7 V = -15V d(on) DD t Rise Time 12 I = -1.2A r D ns t Turn-Off Delay Time 19 R = 6.2 d(off) G t Fall Time 9.3 R = 12, f D C Input Capacitance 180 V = 0V iss GS C Output Capacitance 87 pF V = -25V oss DS C Reverse Transfer Capacitance 42 = 1.0MHz, See Fig. 5 rss MOSFET Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current(Body Diode) -1.25 S A I Pulsed Source Current (Body Diode) -9.6 SM V Body Diode Forward Voltage -1.2 V T = 25C, I = -1.2A, V = 0V SD J S GS t Reverse Recovery Time (Body Diode) 30 45 ns T = 25C, I = -1.2A rr J F Q Reverse Recovery Charge 37 55 nC di/dt = 100A/s rr Schottky Diode Maximum Ratings Parameter Max. Units Conditions I Max. Average Forward Current 1.9 50% Duty Cycle. Rectangular Wave, T = 25C F(av) A A 1.3 See Fig. 14 T = 70C A I Max. peak one cycle Non-repetitive 120 5s sine or 3s Rect. pulse Following any rated SM Surge current 11 10ms sine or 6ms Rect. pulse load condition & A with V applied RRM Schottky Diode Electrical Specifications Parameter Max. Units Conditions V Max. Forward voltage drop 0.50 I = 1.0A, T = 25C FM F J 0.62 I = 2.0A, T = 25C F J V 0.39 I = 1.0A, T = 125C F J 0.57 I = 2.0A, T = 125C. F J I Max. Reverse Leakage current 0.06 V = 30V T = 25C RM R J mA 16 T = 125C J C Max. Junction Capacitance 92 pF V = 5Vdc ( 100kHz to 1 MHz) 25C t R dv/dt Max. Voltage Rate of Charge 3600 V/s Rated V R ( HEXFET is the reg. TM for International Rectifier Power MOSFET s ) 2 www.irf.com