StrongIRFET IRF7580MTRPbF DirectFET N-Channel Power MOSFET Application Brushed motor drive applications V 60V DSS BLDC motor drive applications R typ. 2.9m Battery powered circuits DS(on) Half-bridge and full-bridge topologies max 3.6m Synchronous rectifier applications Resonant mode power supplies I 114A D OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC inverters S SS S DD Benefits SS G Improved gate, avalanche and dynamic dv/dt ruggedness Fully characterized capacitance and avalanche SOA DirectFET Enhanced body diode dv/dt and di/dt capability ME ISOMETRIC Lead-free, RoHS compliant Standard Pack Orderable Part Number Base part number Package Type Form Quantity IRF7580MPbF DirectFET ME Tape and Reel 4800 IRF7580MTRPbF 8.0 120 I = 70A D 110 7.0 100 90 6.0 80 70 5.0 T = 125C J 60 4.0 50 40 3.0 30 20 2.0 T = 25C J 10 1.0 0 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 T , Case Temperature (C) C V Gate -to -Source Voltage (V) GS, Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage 1 www.irf.com 2015 International Rectifier Submit Datasheet Feedback May 14, 2015 R , Drain-to -Source On Resistance (m ) DS(on) I , Drain Current (A) D IRF7580MTRPbF Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 114 D C GS I T = 100C Continuous Drain Current, V 10V 72 A D C GS I Pulsed Drain Current 452 DM P T = 25C Maximum Power Dissipation 96 W D C Linear Derating Factor 0.78 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and -55 to + 150 J C Storage Temperature Range T STG Avalanche Characteristics E Single Pulse Avalanche Energy 81 mJ AS (Thermally limited) E Single Pulse Avalanche Energy 149 AS (Thermally limited) I Avalanche Current A AR See Fig.15,16 , 23a, 23b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Ambient 44 R JA Junction-to-Ambient 12.5 R JA Junction-to-Ambient 20 C/W R JA R Junction-to-Case 1.3 JC Junction-to-PCB Mounted R 0.75 J-PCB Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 44 mV/C Reference to 25C, I = 1.0mA D (BR)DSS J R Static Drain-to-Source On-Resistance 2.9 3.6 V = 10V, I = 70A m DS(on) GS D 3.5 V = 6.0V, I = 35A m GS D V Gate Threshold Voltage 2.1 3.7 V V = V , I = 150A GS(th) DS GS D I Drain-to-Source Leakage Current 1.0 A V = 60V, V = 0V DSS DS GS 150 V = 60V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 0.8 G Notes: Mounted on minimum footprint full size board with metalized TC measured with thermocouple mounted to top (Drain) of part. back and with small clip heatsink. Used double sided cooling , mounting pad with large heatsink. Mounted to a PCB with small clip Mounted on minimum footprint full size Surface mounted on 1 in. square Cu heatsink (still air) board with metalized back and with board (still air). small clip heatsink (still air) 2 www.irf.com 2015 International Rectifier Submit Datasheet Feedback May 14, 2015