PD - 9.1263E IRF7604 HEXFET Power MOSFET l Generation V Technology A 1 8 l Ultra Low On-Resistance D S l P-Channel MOSFET V = -20V 2 7 DSS S D l Very Small SOIC Package 3 6 S D l Low Profile (<1.1mm) 4 l Available in Tape & Reel 5 G D R = 0.09 DS(on) l Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The new Micro8 package, with half the footprint area of the Micro8 standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V -4.5V -3.6 D A GS I T = 70C Continuous Drain Current, V -4.5V -2.9 A D A GS I Pulsed Drain Current -19 DM P T = 25C Power Dissipation 1.8 W D A Linear Derating Factor 14 mW/C V Gate-to-Source Voltage 12 V GS dv/dt Peak Diode Recovery dv/dt -5.0 V/ns T T Junction and Storage Temperature Range -55 to + 150 C J, STG Thermal Resistance Parameter Typ. Max. Units R Maximum Junction-to-Ambient 70 C/W JA All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective only for product marked with Date Code 505 or later . 12/9/97IRF7604 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -20 V V = 0V, I = -250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient -0.022 V/C Reference to 25C, I = -1mA (BR)DSS J D 0.090 V = -4.5V, I = -2.4A GS D R Static Drain-to-Source On-Resistance DS(ON) 0.13 V = -2.7V, I = -1.2A GS D V Gate Threshold Voltage -0.70 V V = V , I = -250A GS(th) DS GS D g Forward Transconductance 2.6 S V = -10V, I = -1.2A fs DS D -1.0 V = -16V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS -25 V = -16V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage -100 V = -12V GS I nA GSS Gate-to-Source Reverse Leakage 100 V = 12V GS Q Total Gate Charge 13 20 I = -2.4A g D Q Gate-to-Source Charge 2.6 3.9 nC V = -16V gs DS Q Gate-to-Drain Mille) Charge 5.6 9.0 V = -4.5V, See Fig. 6 and 9 gd GS t Turn-On Delay Time 17 V = -10V d(on) DD t Rise Time 53 I = -2.4A r D ns t Turn-Off Delay Time 31 R = 6.0 d(off) G t Fall Time 38 R = 4.0, See Fig. 10 f D C Input Capacitance 590 V = 0V iss GS C Output Capacitance 330 pF V = -15V oss DS C Reverse Transfer Capacitance 170 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S -1.8 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM -19 (Body Diode) p-n junction diode. S V Diode Forward Voltage -1.2 V T = 25C, I = -2.4A, V = 0V SD J S GS t Reverse Recovery Time 41 62 ns T = 25C, I = -2.4A rr J F Q Reverse Recovery Charge 38 57 nC di/dt = 100A/s rr Notes: Repetitive rating pulse width limited by Pulse width 300s duty cycle 2%. max. junction temperature. ( See fig. 11 ) I -2.4A, di/dt -96A/s, V V , Surface mounted on FR-4 board, t 10sec. SD DD (BR)DSS T 150C J