DirectFET Power MOSFET RoHS Compliant, Halogen Free Lead-Free (Qualified up to 260C Reflow) V V R DSS GS DS(on) Ideal for High Performance Isolated Converter 40V min 20V max 0.70m 10V Primary Switch Socket Q Q V g tot gd gs(th) Optimized for Synchronous Rectification 220nC 81nC 2.8V Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) S S S S Dual Sided Cooling Compatible S D S D G S Compatible with existing Surface Mount Techniques S Industrial Qualified DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline SB SC M2 M4 L4 L6 L8 % & & ( ) * + ) * , ) ( -. & % /0 ) , 0 ( ) * ) 1 % 2 2 & ) )) 3 45 % 62 ) & ) ) 3 , + & & 62 3 )) - + / 7 , & & 2, 2 & & ) 0 ( ) * &2 & & 1 8 , ) % 0 ) 8 & , , 62 % & % 2 , )) 0 &2 & & 2) & , ) , ,, % & ) 2 3 * % , % % ) 3 & * & & , ) , ) . Ordering Information Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRF7739L1TRPbF DirectFET Large Can Tape and Reel 4000 IRF7739L1TRPbF Absolute Maximum Ratings Parameter Max. Units V 40 Drain-to-Source Voltage V DS 20 V Gate-to-Source Voltage GS (Silicon Limited) I T = 25C Continuous Drain Current, V 10V 270 GS D C Continuous Drain Current, V 10V (Silicon Limited) 190 I T = 100C A C GS D Continuous Drain Current, V 10V (Silicon Limited) 46 I T = 25C GS D A (Package Limited) I T = 25C Continuous Drain Current, V 10V 375 GS D C 1070 I Pulsed Drain Current DM E Single Pulse Avalanche Energy 270 mJ AS I 160 Avalanche Current A AR 10 0.93 V = 10V I = 160A D 0.92 GS 8 0.91 T = 25C J 0.90 6 0.89 4 0.88 T = 125C J 0.87 2 0.86 0 0.85 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0 40 80 120 160 200 I , Drain Current (A) V Gate -to -Source Voltage (V) D GS, Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical On-Resistance vs. Drain Current Click on the hyperlink (to the relevant technical document) for more details. T measured with thermocouple mounted to top (Drain) of part. C Click on the hyperlink (to the DirectFET website) for more details Repetitive rating pulse width limited by max. junction temperature. Surface mounted on 1 in. square Cu board, steady state. Starting T = 25C, L = 0.021mH, R = 25, I = 160A. J G AS Typical R (m ) DS (on) T (m) ypical R DS (on ) Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV V = 0V, I = 250 A Drain-to-Source Breakdown Voltage 40 V DSS GS D Reference to 25C, I = 1.0mA V /T Breakdown Voltage Temp. Coefficient 0.008 V/C D DSS J R V = 10V, I = 160A Static Drain-to-Source On-Resistance 0.70 1.0 m DS(on) GS D V = V , I = 250 A V Gate Threshold Voltage 2.0 2.8 4.0 V DS GS D GS(th) V /T Gate Threshold Voltage Coefficient -6.7 mV/C GS(th) J V = 40V, V = 0V I Drain-to-Source Leakage Current 20 A DS GS DSS V = 32V, V = 0V, T = 125C 250 DS GS J V = 20V I Gate-to-Source Forward Leakage 100 nA GS GSS V = -20V Gate-to-Source Reverse Leakage -100 GS V = 10V, I = 160A gfs Forward Transconductance 280 S DS D Q Total Gate Charge 220 330 g V = 20V Q Pre-Vth Gate-to-Source Charge 46 DS gs1 V = 10V Q Post-Vth Gate-to-Source Charge 19 nC GS gs2 Q I = 160A Gate-to-Drain Charge 81 120 D gd Q Gate Charge Overdrive 74 See Fig. 9 godr Q Switch Charge (Q + Q ) 100 sw gs2 gd V = 16V, V = 0V Q Output Charge 83 nC DS GS oss R Gate Resistance 1.5 G V = 20V, V = 10V t Turn-On Delay Time 21 DD GS d(on) t I = 160A Rise Time 71 r D t R =1.8 Turn-Off Delay Time 56 ns d(off) G t Fall Time 42 f V = 0V C Input Capacitance 11880 GS iss V = 25V C Output Capacitance 2510 pF DS oss C = 1.0MHz Reverse Transfer Capacitance 1240 rss V = 0V, V = 1.0V, f=1.0MHz C Output Capacitance 8610 oss GS DS C V = 0V, V = 32V, f=1.0MHz Output Capacitance 2230 oss GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions I MOSFET symbol Continuous Source Current 110 S (Body Diode) A showing the I integral reverse Pulsed Source Current 1070 SM (Body Diode) p-n junction diode. V T = 25C, I = 160A, V = 0V Diode Forward Voltage 1.3 V SD J S GS T = 25C, I = 160A, V = 20V t Reverse Recovery Time 87 130 ns J F DD rr Q di/dt = 100A/ s Reverse Recovery Charge 250 380 nC rr Repetitive rating pulse width limited by max. junction temperature. Pulse width 400s duty cycle 2%.