IRF7748L1TRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) Applications V V R RoHS Compliant, Halogen Free DSS GS DS(on) Lead-Free (Qualified up to 260C Reflow) 60V min 20V max 1.7m 10V Ideal for High Performance Isolated Converter Q Q V Primary Switch Socket g tot gd gs(th) Optimized for Synchronous Rectification 146nC 40nC 2.9V Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) S SS Dual Sided Cooling Compatible D D Compatible with existing Surface Mount Techniques G SS S Industrial Qualified DirectFET ISOMETRIC L6 Applicable DirectFET Outline and Substrate Outline SB SC M2 M4 L4 L6 L8 Description The IRF7748L1TRPbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFETTM packag- ing to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems. The IRF7748L1TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for sys- tem reliability improvements, and makes this device ideal for high performance power converters. Ordering Information Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRF7748L1TRPbF DirectFET Large Can Tape and Reel 4000 IRF7748L1TRPbF Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 60 DS V Gate-to-Source Voltage 20 V GS I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 148 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 104 D C GS I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 28 A D A GS I Pulsed Drain Current 592 DM E Single Pulse Avalanche Energy 129 mJ AS I Avalanche Current 89 A AR 8 3.0 I = 89A D V = 6V GS 2.5 6 V = 7V GS 2.0 V = 10V GS 4 T = 125C J V = 12V GS 1.5 2 T = 25C J 1.0 0 0 25 50 75 100 125 150 175 200 2 4 6 8 10 12 14 16 18 20 I , Drain Current (A) D V Gate -to -Source Voltage (V) GS, Fig 2. Typical On-Resistance vs. Drain Current Fig 1. Typical On-Resistance vs. Gate Voltage Notes TC measured with thermocouple mounted to top (Drain) of part. Click on this section to link to the appropriate technical paper. Repetitive rating pulse width limited by max. junction temperature. Click on this section to link to the DirectFET Website. Starting T = 25C, L = 0.033mH, R = 50 , I = 89A. J G AS Surface mounted on 1 in. square Cu board, steady state. 1 www.irf.com 2012 International Rectifier February 18, 2013 R , Drain-to -Source On Resistance (m) DS(on) Typical R ( m DS(on) IRF7748L1TRPbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250A DSS GS D Breakdown Voltage Temp. Coefficient 0.022 V/C Reference to 25C, I = 2mA V /T DSS J D R Static Drain-to-Source On-Resistance 1.7 2.2 m V = 10V, I = 89A DS(on) GS D V Gate Threshold Voltage 2.0 2.9 4.0 V V = V , I = 250A GS(th) DS GS D V /T Gate Threshold Voltage Temp. Coefficient -9.9 mV/C GS(th) J 20 V =60 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V =60V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 176 S V = 10V, I =89A DS D Q Total Gate Charge 146 220 g Q Pre Vth Gate-to-Source Charge 31 V = 30V gs1 DS Q Post Vth Gate-to-Source Charge 12 nC V = 10V gs2 GS Q Gate-to-Drain Charge 40 I = 89A gd D Q Gate Charge Overdrive 63 See Fig.9 godr Q Switch Charge (Q Q 52 sw gs2 + gd) Q Output Charge 82 nC V = 16V,V = 0V oss DS GS R Gate Resistance 1.3 G t Turn-On Delay Time 19 V = 30V, V = 10V d(on) DD GS t Rise Time 104 I = 89A r D ns t Turn-Off Delay Time 54 R = 1.8 d(off) G t Fall Time 77 f C Input Capacitance 8075 V = 0V iss GS C Output Capacitance 1150 V = 50V oss DS C Reverse Transfer Capacitance 540 = 1.0MHz rss pF C Output Capacitance 5390 V =0V, V = 1.0V, =1.0MHz oss GS DS C Output Capacitance 850 V =0V, V = 48V, =1.0MHz oss GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 85 S (Body Diode) showing the A Pulsed Source Current integral reverse I 592 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 89A,V = 0V SD J S GS t Reverse Recovery Time 58 ns T = 25C ,I = 89A,V = 30V rr J F DD Q Reverse Recovery Charge 113 nC di/dt = 100A/s rr Notes: Repetitive rating pulse width limited by max. junction temperature. Pulse width 400s duty cycle 2% 2 www.irf.com 2012 International Rectifier February 18, 2013