DirectFET Power MOSFET RoHS Compliant, Halogen Free Lead-Free (Qualified up to 260C Reflow) Ideal for High Performance Isolated Converter V V R DSS GS DS(on) Primary Switch Socket 60V min 20V max 1.1m 10V Optimized for Synchronous Rectification Low Conduction Losses Q Q V g tot gd gs(th) High Cdv/dt Immunity Low Profile (<0.7mm) 200nC 71nC 2.9V Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques S S Industrial Qualified S S G D D S S S S DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline SB SC M2 M4 L4 L6 L8 Description TM The IRF7749L2TR/TR1PbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to 2 achieve the lowest on-state resistance in a package that has a footprint smaller than a D PAK and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems. The IRF7749L2TR/TR1PbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance power converters. Standard Pack Orderable part number Package Type Note Form Quantity IRF7749L2TRPbF DirectFET2 Large Can Tape and Reel 4000T suffix IRF7749L2TR1PbF DirectFET2 Large Can Tape and Reel 1000TR1 suffix EOL notice 264 Absolute Maximum Ratings Max. Parameter Units Drain-to-Source Voltage 60 V V DS V Gate-to-Source Voltage 20 GS 200 I T = 25C Continuous Drain Current, V 10V (Silicon Limited) D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 140 A D C GS I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 33 D A GS I T = 25C Continuous Drain Current, V 10V (Package Limited) 375 D C GS I Pulsed Drain Current 800 DM Single Pulse Avalanche Energy 260 mJ E AS I Avalanche Current 120 A AR 1.60 12.0 T = 25C V = 6.0V I = 120A C GS D 10.0 V = 8.0V GS 1.40 V = 10V GS 8.0 V = 14V GS 6.0 1.20 T = 25C J 4.0 T = 125C J 1.00 2.0 0.0 0.80 4.0 6.0 8.0 10.0 12.0 14.0 16.0 40 80 120 160 200 V , Gate-to-Source Voltage (V) GS I , Drain Current (A) D Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical On-Resistance vs. Drain Current Click on this section to link to the appropriate technical paper. T measured with thermocouple mounted to top (Drain) of part. C Click on this section to link to the DirectFET Website. Repetitive rating pulse width limited by max. junction temperature. Surface mounted on 1 in. square Cu board, steady state. Starting T = 25C, L = 0.035mH, R = 25, I = 120A. J G AS Typical R (on), (m) DS Typical R ( m) DS(on) Static T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units V = 0V, I = 250 A BV Drain-to-Source Breakdown Voltage 60 V GS D DSS Reference to 25C, I = 2mA V /T Breakdown Voltage Temp. Coefficient 0.03 V/C D DSS J R Static Drain-to-Source On-Resistance 1.1 1.50 V = 10V, I = 120A m GS D DS(on) V = V , I = 250 A V Gate Threshold Voltage 2.0 2.9 4.0 V DS GS D GS(th) V / T Gate Threshold Voltage Coefficient -10 mV/C GS(th) J I V = 60V, V = 0V Drain-to-Source Leakage Current 20 A DS GS DSS V = 48V, V = 0V, T = 125C 250 DS GS J I V = 20V Gate-to-Source Forward Leakage 100 nA GSS GS V = -20V Gate-to-Source Reverse Leakage -100 GS V = 10V, I = 120A gfs Forward Transconductance 280 S DS D Q Total Gate Charge 200 300 g Q V = 30V Pre-Vth Gate-to-Source Charge 36 gs1 DS Q V = 10V Post-Vth Gate-to-Source Charge 12 nC gs2 GS Q I = 120A Gate-to-Drain Charge 71 110 gd D Q Gate Charge Overdrive 100 See Fig. 9 godr Q Switch Charge (Q + Q ) 83 sw gs2 gd V = 16V, V = 0V Q Output Charge 67 nC oss DS GS R Gate Resistance 1.1 G V = 30V, V = 10V t Turn-On Delay Time 17 d(on) DD GS I = 120A t Rise Time 43 r D t R =1.8 Turn-Off Delay Time 78 ns d(off) G t Fall Time 39 f V = 0V C Input Capacitance 12320 iss GS V = 25V C Output Capacitance 1810 pF DS oss C Reverse Transfer Capacitance 850 = 1.0MHz rss V = 0V, V = 1.0V, f=1.0MHz C Output Capacitance 8060 GS DS oss V = 0V, V = 120V, f=1.0MHz C Output Capacitance 1310 GS DS oss Diode Characteristics Parameter Min. Typ. Max. Units Conditions I MOSFET symbol Continuous Source Current 200 S showing the (Body Diode) A I integral reverse Pulsed Source Current 800 SM (Body Diode) p-n junction diode. V T = 25C, I = 120A, V = 0V Diode Forward Voltage 1.3 V SD J S GS t T = 25C, I = 120A, V = 30V Reverse Recovery Time 45 68 ns rr J F DD Q Reverse Recovery Charge 78 120 nC di/dt = 100A/s rr Repetitive rating pulse width limited by max. junction temperature. Pulse width 400s duty cycle 2%.