IRF7805ZPbF HEXFET Power MOSFET Applications V R max Qg (typ.) DSS DS(on) High Frequency Point-of-Load 6.8m V = 10V 30V 18nC GS Synchronous Buck Converter for Applications in Networking & Computing Systems. A Lead-Free A 1 8 S D Benefits 2 7 S D Very Low R at 4.5V V DS(on) GS 3 6 S D Ultra-Low Gate Impedance 4 5 G D Fully Characterized Avalanche Voltage and Current SO-8 Top View 100% tested for Rg Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 V DS V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V GS 16 D A I T = 70C Continuous Drain Current, V 10V GS 12 A D A Pulsed Drain Current I 120 DM Power Dissipation P T = 25C 2.5 W D A Power Dissipation P T = 70C 1.6 D A Linear Derating Factor 0.02 W/C T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units Junction-to-Drain Lead R JL 20 C/W Junction-to-Ambient R JA 50 Notes through are on page 10 www.irf.com 1 06/30/05 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A GS D V /T DSS J Breakdown Voltage Temp. Coefficient 0.023 V/C Reference to 25C, I = 1mA D R Static Drain-to-Source On-Resistance 5.5 6.8 V = 10V, I = 16A DS(on) m GS D 7.0 8.7 V = 4.5V, I = 13A GS D V Gate Threshold Voltage 1.35 2.25 V V = V , I = 250A GS(th) DS GS D V GS(th) Gate Threshold Voltage Coefficient - 4.7 mV/C I DSS Drain-to-Source Leakage Current 1.0 A V = 24V, V = 0V DS GS 150 V = 24V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 100 nA V = 20V GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 64 S V = 15V, I = 12A DS D Q g Total Gate Charge 18 27 Q Pre-Vth Gate-to-Source Charge 4.7 V = 15V gs1 DS Q Post-Vth Gate-to-Source Charge 1.6 nC V = 4.5V gs2 GS Q Gate-to-Drain Charge 6.2 I = 12A gd D Q godr Gate Charge Overdrive 5.5 See Fig. 16 Q Switch Charge (Q + Q ) sw gs2 gd 7.8 Q oss Output Charge 10 nC V = 16V, V = 0V DS GS R Gate Resistance 1.0 2.1 G t d(on) Turn-On Delay Time 11 V = 15V, V = 4.5V DD GS t Rise Time 10 I = 12A r D t Turn-Off Delay Time 14 ns Clamped Inductive Load d(off) t Fall Time 3.7 f C iss Input Capacitance 2080 V = 0V GS C oss Output Capacitance 480 pF V = 15V DS C rss Reverse Transfer Capacitance 220 = 1.0MHz Avalanche Characteristics Parameter Max. Units Typ. Single Pulse Avalanche Energy E AS 72 mJ Avalanche Current I AR 12 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 3.1 MOSFET symbol S showing the (Body Diode) A I SM Pulsed Source Current 120 integral reverse (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.0 V T = 25C, I = 12A, V = 0V J S GS t rr Reverse Recovery Time 29 44 ns T = 25C, I = 12A, V = 15V DD J F Q di/dt = 100A/s Reverse Recovery Charge 20 30 nC rr t Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) Forward Turn-On Time S D on 2 www.irf.com