IRF7815PbF HEXFET Power MOSFET Applications V R max Qg (typ.) DSS DS(on) Synchronous MOSFET for Notebook 43m V = 10V 150V 25nC GS Processor Power Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 S D Benefits 2 7 S D Very Low R at 10V V DS(on) GS 3 6 S D Low Gate Charge 4 5 G D Fully Characterized Avalanche Voltage and Current SO-8 Top View 20V V Max. Gate Rating GS Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 150 DS V V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V I T = 25C GS 5.1 D A Continuous Drain Current, V 10V I T = 70C 4.1 A GS A D Pulsed Drain Current I 41 DM Power Dissipation P T = 25C 2.5 W A D Power Dissipation P T = 70C 1.6 A D Linear Derating Factor 0.02 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units Junction-to-Drain Lead R JL 20 C/W Junction-to-Ambient R 50 JA Notes through are on page 9 www.irf.com 1 12/01/09 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 150 V V = 0V, I = 250A GS D V /T DSS J Breakdown Voltage Temp. Coefficient 0.17 V/C Reference to 25C, I = 1mA D R DS(on) Static Drain-to-Source On-Resistance 34 43 V = 10V, I = 3.1A m GS D V GS(th) Gate Threshold Voltage 3.0 4.0 5.0 V V = V , I = 100A DS GS D V GS(th) Gate Threshold Voltage Coefficient -12.2 mV/C I Drain-to-Source Leakage Current 20 V = 150V, V = 0V DSS DS GS A 250 V = 150V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 8.2 S V = 50V, I = 3.1A DS D Q g Total Gate Charge 25 38 Q gs1 Pre-Vth Gate-to-Source Charge 6.5 V = 75V DS Q gs2 Post-Vth Gate-to-Source Charge 1.3 V = 10V GS Q gs Gate-to-Source Charge 7.8 nC I = 3.1A D Q gd Gate-to-Drain Charge 7.4 See Figs. 6, 16a & 16b Q Gate Charge Overdrive 9.8 godr Q Switch Charge (Q + Q ) 8..7 sw gs2 gd Q Output Charge 10 nC = 16V, V = 0V oss V DS GS R G Gate Resistance 1.02 t d(on) Turn-On Delay Time 8.4 V = 75V, V = 10V DD GS t r Rise Time 3.2 I = 3.1A D ns t d(off) Turn-Off Delay Time 14 R = 1.8 G t f Fall Time 8.3 See Figs. 15a & 15b C Input Capacitance 1647 V = 0V iss GS C Output Capacitance 129 V = 75V oss pF DS C Reverse Transfer Capacitance 30 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E AS 529 mJ Avalanche Current I AR 3.1 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol 2.3 (Body Diode) showing the A I Pulsed Source Current integral reverse SM 41 (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.3 V T = 25C, I = 3.1A, V = 0V J S GS t rr Reverse Recovery Time 41 62 ns T = 25C, I = 3.1A, V = 75V J F DD Q di/dt = 300A/s rr Reverse Recovery Charge 213 320 nC 2 www.irf.com