IRF7820PbF HEXFET Power MOSFET Applications V R max Qg (typ.) DSS DS(on) Synchronous MOSFET for Notebook 200V 78m V = 10V 29nC GS Processor Power Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 S D Benefits 2 7 S D Very Low R at 10V V DS(on) GS 3 6 S D Low Gate Charge 4 5 G D Fully Characterized Avalanche Voltage and Current SO-8 Top View 20V V Max. Gate Rating GS Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 200 DS V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 3.7 D A GS I T = 70C Continuous Drain Current, V 10V 2.9 A D A GS Pulsed Drain Current I 29 DM Power Dissipation P T = 25C 2.5 W D A Power Dissipation P T = 70C 1.6 D A Linear Derating Factor 0.02 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units Junction-to-Drain Lead R 20 JL C/W Junction-to-Ambient R JA 50 Notes through are on page 9 www.irf.com 1 07/24/2012 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 200 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.23 V/C Reference to 25C, I = 1mA DSS J D RDS(on) Static Drain-to-Source On-Resistance 62.5 78 m VGS = 10V, ID = 2.2A V Gate Threshold Voltage 3.0 4.0 5.0 V GS(th) V = V , I = 100A DS GS D V Gate Threshold Voltage Coefficient -12 mV/C GS(th) Drain-to-Source Leakage Current 20 = 200V, V = 0V IDSS VDS GS A 250 V = 200V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 5.0 S V = 50V, I = 2.2A DS D Q Total Gate Charge 29 44 g Qgs1 Pre-Vth Gate-to-Source Charge 8.6 VDS = 100V Q Post-Vth Gate-to-Source Charge 1.5 V = 10V gs2 GS Q Gate-to-Source Charge 10.1 nC I = 2.2A gs D Gate-to-Drain Charge 8.7 See Figs. 6, 16a & 16b Qgd Q Gate Charge Overdrive 10.2 godr Q Switch Charge (Q + Q ) 10.2 sw gs2 gd Q Output Charge 30 nC V = 20V, V = 0V oss DS GS R Gate Resistance 0.73 G t Turn-On Delay Time 7.1 V = 200V, V = 10V d(on) DD GS t Rise Time 3.2 I = 2.2A r D ns t Turn-Off Delay Time 14 d(off) R = 1.8 G t Fall Time 12 See Figs. 15a & 15b f Ciss Input Capacitance 1750 VGS = 0V C Output Capacitance 90 pF V = 100V oss DS C Reverse Transfer Capacitance 25 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 606 mJ AS Avalanche Current I 2.8 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol S 1.5 (Body Diode) showing the A I Pulsed Source Current integral reverse SM 29 (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 2.2A, V = 0V SD J S GS trr Reverse Recovery Time 33 50 ns T = 25C, I = 2.2A, VDD = 100V J F di/dt = 500A/s Q Reverse Recovery Charge 213 320 nC rr 2 www.irf.com